The basic design considerations for a spectrally-stable DBR semiconductor laser specifically designed for pulsing in the
nanosecond regime is presented, along with test results from devices fabricated according to these design parameters.
Results show excellent mode selection and spectral stability over an extremely large range of conditions, including
temperature ranges of 15-60°C and peak drive current ranges from threshold to 880 mA. These lasers exhibit peak
output powers of greater than 500 mW for DBR semiconductor lasers at 976 nm and 1064 nm while remaining spectrally
stable. Chirp data shows the chirp can be effectively tuned from approximately 1 GHz to greater than 20 GHz by
varying the pulse width and peak drive current.
Spectral and output power data of distributed Bragg reflector lasers emitting in the technologically important wavelength
range from 780 nm to 1083 nm are presented. These devices are fabricated in a single molecular beam epitaxy growth
step, and the gratings are defined by holographic interferometry. Spectral dependencies on the grating and gain section
lengths are systematically investigated. Experimental data for the side-mode suppression ratio, mode spacing, and
thermal wavelength shift are given for devices emitting in the near infrared wavelength range between 780 nm and 1083
The effect of intracavity apertures and distributed Bragg reflectors (DBRs) on transverse-mode discrimination in vertical-cavity surface-emitting lasers is investigated theoretically. The effects of aperture shape and size as well as the stop-band width of the DBRs are examined with the goal of optimizing the mode discrimination for better lasing stability and higher single-mode power. It is found that decreasing the width of the DBRs' stop band, by means of controlling the material composition and number of layer pairs, increases significantly the optimum aperture size and hence the single-mode output power.
Conference Committee Involvement (4)
Novel In-Plane Semiconductor Lasers XI
23 January 2012 | San Francisco, California, United States
Novel In-Plane Semiconductor Lasers X
24 January 2011 | San Francisco, California, United States
Novel In-Plane Semiconductor Lasers IX
25 January 2010 | San Francisco, California, United States
Novel In-Plane Semiconductor Lasers VIII
26 January 2009 | San Jose, California, United States