Dr. Martin Heiss
at Ecole Polytechnique Fédérale de Lausanne
SPIE Involvement:
Author
Publications (1)

PROCEEDINGS ARTICLE | September 16, 2011
Proc. SPIE. 8106, Nanoepitaxy: Materials and Devices III
KEYWORDS: Semiconductors, Optical properties, Luminescence, Gallium arsenide, Silicon, Doping, Gallium, Heterojunctions, Absorption, Nanowires

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