Dr. Martin Strassburg Profile

Dr. Martin Strassburg

Director at OSRAM Opto Semiconductors GmbH

SPIE Involvement:

Conference Chair | Conference Co-Chair | Editor | Author

Publications (18)

SPIE Conference Volume | May 8, 2018

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

PROCEEDINGS ARTICLE | March 14, 2018

Carrier localization in InGaN-based light-emitting diodes (Conference Presentation)

Proc. SPIE. 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

KEYWORDS: Quantum wells, Light emitting diodes, Electrons, Indium, Quantum efficiency, Electroluminescence, Indium gallium nitride, Applied physics, Electro optics, Internal quantum efficiency

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SPIE Conference Volume | May 17, 2017

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

SPIE Conference Volume | June 24, 2016

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

PROCEEDINGS ARTICLE | March 8, 2016

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

Proc. SPIE. 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

KEYWORDS: Plasmons, Light emitting diodes, Luminescence, Crystals, Electrons, Silicon, Doping, Raman spectroscopy, Gallium nitride, Sapphire

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PROCEEDINGS ARTICLE | March 8, 2016

AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Proc. SPIE. 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

KEYWORDS: Modeling, Quantum wells, Continuous wave operation, Light emitting diodes, LED lighting, External quantum efficiency, Aluminium gallium indium phosphide, Solid state lighting, Crystals, Gallium arsenide, Electroluminescence, Photonics, Indium gallium nitride, Oscilloscopes

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PROCEEDINGS ARTICLE | March 8, 2016

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

Proc. SPIE. 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

KEYWORDS: Quantum wells, Light emitting diodes, External quantum efficiency, Nanoepitaxy, Luminescence, Electroluminescence, Transmission electron microscopy, Gallium nitride, 3D metrology, Photomasks, Indium gallium nitride, Transparent conductors, Electro optics, Semiconducting wafers, Optical microcavities, Vapor phase epitaxy, Nanolithography, Microtechnology, 3D microstructuring

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SPIE Conference Volume | April 23, 2015

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

SPIE Conference Volume | April 1, 2014

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

PROCEEDINGS ARTICLE | February 27, 2014

Long wavelength nanowire light emitting diodes

Proc. SPIE. 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

KEYWORDS: Light emitting diodes, External quantum efficiency, Polarization, Silicon, Electroluminescence, Gallium nitride, Indium gallium nitride, Heterojunctions, Temperature metrology, Nanowires

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SPIE Conference Volume | March 29, 2013

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII

PROCEEDINGS ARTICLE | February 28, 2012

Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

Proc. SPIE. 8255, Physics and Simulation of Optoelectronic Devices XX

KEYWORDS: Quantum wells, Light emitting diodes, Polarization, Luminescence, Quantum efficiency, Gallium nitride, Quantization, Internal quantum efficiency, Absorption, Nanowires

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PROCEEDINGS ARTICLE | April 4, 2011

Fabrication of hole pattern for position-controlled MOVPE-grown GaN nanorods with highly precise nanoimprint technology

Proc. SPIE. 7970, Alternative Lithographic Technologies III

KEYWORDS: Nanotechnology, Nanostructures, Silica, Etching, Manufacturing, Scanning electron microscopy, Gallium nitride, Nanoimprint lithography, Semiconducting wafers, Nanorods

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PROCEEDINGS ARTICLE | February 21, 2011

Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets

Proc. SPIE. 7933, Physics and Simulation of Optoelectronic Devices XIX

KEYWORDS: Refractive index, Mirrors, Light emitting diodes, Optical properties, Cladding, Interfaces, Silver, Gallium nitride, Phase shifts, Nanorods

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PROCEEDINGS ARTICLE | February 13, 2007

Measurement of the internal quantum efficiency of InGaN quantum wells

Proc. SPIE. 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI

KEYWORDS: Quantum wells, Light emitting diodes, Magnesium, Luminescence, Doping, Gallium nitride, Indium gallium nitride, Electron holes, Internal quantum efficiency, Temperature metrology

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PROCEEDINGS ARTICLE | March 3, 2006

Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors

Proc. SPIE. 6121, Gallium Nitride Materials and Devices

KEYWORDS: Ferromagnetics, Ions, Silicon, Magnetism, Raman spectroscopy, Gallium nitride, Manganese, Metalorganic chemical vapor deposition, Gallium, Magnetic semiconductors

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Wide bandgap nitrides and oxides have been heralded as a possible platform for future semiconductor spintronics applications based on the inherent compatibility of these materials with existing semiconductors as well as theoretical predictions of room temperature ferromagnetism. Experimental reports of room temperature ferromagnetism in these materials are complicated by disparate crystalline quality and phase purity in these materials, as well as conflicting theoretical predictions as to the nature of ferromagnetic behavior in this system. A complete understanding of these materials, and ultimately intelligent design of spintronic devices, will require an exploration of the relationship between the processing techniques, resulting transition metal atom configuration, defects, and electronic compensation as related to the structure, magnetic, and magneto-optical properties of this material. This work explores the growth and properties of Ga_1-xMn_xN films by metalorganic chemical vapor deposition on cplane sapphire substrates with varying thickness, Mn concentration, and alloying elements. Homogenous Mn incorporation throughout the films was verified with Secondary Ion Mass Spectroscopy (SIMS), and no macroscopic second phases were detected using X-ray diffraction (XRD). SQUID and vibrating sample magnetometry measurements showed an apparent room temperature ferromagnetic hysteresis, whose strength can be altered considerably through annealing and introduction of either Si or Mg during the growth process. Three sets of Raman modes appeared to be sensitive to Mn incorporation. The intensities of a broad band around 300cm^-1 and sharper modes near 669cm^-1 increased with increasing Mn concentration. The rise of the former is attributed to a decrease in long-range lattice ordering for higher Mn concentration. The second mode is due to nitrogen vacancy-related local vibrational modes of the GaN host lattice. Si co-doped Ga_1-xMn_xN results in shallow donor states in GaN suppress the formation of nitrogen vacancies by compensating the p-type deep level defects introduced by substitutional Mn. The formation of a Mn-related midgap impurity band is observed via optical transmission measurement in Ga_1-xMn_xN with strong magnetic signatures, but not for Si co-doped samples. Initial studies on light emitting diodes (LEDs) containing a Mn-doped active region have also been produced. Devices were fabricated with different Mn-doped active layer thicknesses, and I-V characteristics show that the devices become highly resistive as thickness of the Mn-doped active layer increases. The electroluminescence of these devices is dominated by a high suppressed band-edge recombination and a midgap defect-related emission, leading to an orange-colored but weakly emitting LED. These results suggest that traditional theoretical and device approaches akin to those realized in Ga_1-xMn_xN may be difficult to realize in Ga_1-xMn_xN, and exploitation of these materials will require further novel device approaches taking into account the nature of this material.

PROCEEDINGS ARTICLE | September 21, 2005

The growth of InN and related alloys by high-pressure CVD

Proc. SPIE. 5912, Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II

KEYWORDS: Ultraviolet radiation, Indium, Nitrogen, Chemistry, Chemical vapor deposition, Optoelectronics, Aluminum, Gallium, Indium nitride, Absorption

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PROCEEDINGS ARTICLE | March 25, 2005

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Proc. SPIE. 5732, Quantum Sensing and Nanophotonic Devices II

KEYWORDS: Nanostructures, Ferromagnetics, Annealing, Silicon, Magnetism, Gallium nitride, Manganese, Metalorganic chemical vapor deposition, Gallium, Magnetic semiconductors

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Showing 5 of 18 publications

Conference Committee Involvement (7)

Light-Emitting Devices, Materials, and Applications for Illumination, Information, and Beyond

2 February 2019 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

29 January 2018 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

30 January 2017 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

15 February 2016 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

10 February 2015 | San Francisco, California, United States

Showing 5 of 7 published special sections

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