In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum well structures. InAsN
epilayers with room-temperature photoluminescence emission have been successfully grown by MBE on InAs and GaAs
substrates. By careful attention to growth conditions, device quality material can be obtained for N contents up to ~3%
with band gap reduction which follows the band anti-crossing model. Mid-infrared light-emitting diodes containing ten period
InAsNSb/InAs multi-quantum wells within the active region were fabricated. These devices exhibited
electroluminescence up to room temperature consistent with e-hh<sub>1</sub> and e-lh<sub>1</sub> transitions within type I quantum wells in good agreement with calculations. Comparison of the temperature dependence of the EL with that of type II InAsSb/InAs reveals more intense emission at low temperature and an improved temperature quenching up to T~200 K where thermally activated carrier leakage becomes important and further increase in the QW band offsets is needed. This
material system shows promise for use in mid-infrared diode lasers and other optoelectronic devices.
We report the molecular beam epitaxial growth of narrow gap dilute nitride InAsN alloys onto GaAs substrates using a
nitrogen plasma source. The photoluminescence (PL) of InAsN alloys with N-content in the range 0 to 1% which
exhibit emission in the mid-infrared spectral range is described. The sample containing 1% N reveals evidence of
recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of
GaAs and InAs based material shows little change in PL linewidth such that the change in substrate does not cause
significant reduction in quality of the epilayers. The band gap dependence on N content in our material is consistent
with predictions from the band anti-crossing model. We also report the growth of InAsSbN/InAs multi-quantum wells
which exhibit bright PL up to a temperature of 250 K without any post growth annealing. Consideration of the power
dependent PL behaviour is consistent with Type I band alignment arising from strong lowering of the conduction band
edge due to N-induced band anti-crossing effects.
We report the successful growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range 0 to 1% and photoluminescence emission in the mid-infrared spectral range. The photoluminescence emission of the sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in FWHM suggesting the change in substrate does not cause significant reduction in quality of the epilayers. Material grown is consistent with predictions from the band anti-crossing model (BAC model).