In this paper, we report on time resolved electro-optic measurements in strained silicon resonators. Strain is induced by applying a mechanical deformation to the device. It is demonstrated that the linear electro-optic effect vanishes when the applied voltage modulation varies much faster than the free carrier lifetime, and that this occurs independently on the level of the applied stress. This demonstrates that, at frequencies which lie below the free carrier recombination rate, the electro-optic modulation is caused by plasma carrier dispersion. After normalizing out free carrier effects, it is found an upper limit of (8 ± 3) pm/V to the value of the strain induced χ(2)eff, zzztensor component. This is an order of magnitude lower than the previously reported values for static electro-optic measurements.
We report on a joint theoretical and experimental study of an analogue of the Lamb shift in the photonic framework. The platform is an integrated photonic device consisting of a single mode waveguide vertically coupled to a disk-shaped microresonator. The presence of a neighboring waveguide induces a reactive inter-mode coupling in the resonator, an effect analogous to an off-diagonal Lamb shift from atomic physics. Waveguide mediated coupling of different radial families results in peculiar Fano lineshapes in the waveguide transmission spectra, which manifests for different relative frequency shifts of the modes at different azimuthal numbers. Finally, a non-linear model for the dinamic tuning of the Fano lineshape under continuous wave pumping conditions is proposed.