Optical lithography has driven on-going miniaturization in the microelectronics industry, thereby enabling continuation
of 'Moore's Law'. To achieve this, lithographers have steadily reduced the wavelength of the illumination light used in
the optical systems. However, as we transition from the visible spectrum, through ultra-violet, and now towards the soft
x-ray wavelength regime, a host of new challenges are introduced. The majority of these challenges are related to
material properties, as wavelength reduction significantly narrows the field of available materials that are both
sufficiently transparent, as well as radiation resistant to the illumination light. We also are limited by the actual
wavelengths that can be produced which deliver sufficient power to provide a production-worthy light source. In this
paper, we will examine the history of wavelength transition in optical lithography, explaining the key material
developments that enabled wavelengths such as 248nm to be highly successful, as well as explain the reasons
wavelengths such as 157nm and 126nm were not adopted.
The amazing growth of the semiconductor industry over the past decades has been supported, and in many cases driven,
by miniaturization of devices. Behind this has been one strong backbone - lithography. In the 1970's, devices had
geometries of several micrometers, but now we are about to enter 45nm device pre-production and shortly after move it
into volume-production. Immersion lithography, although having a short development time, is already in production and
will become the primary technology driver. What we need to do now is identify the solutions for 32nm lithography.
There are several candidates for 32nm lithography, such as EUVL, High Index Immersion and Double Patterning /
Double Exposure. Other more esoteric technologies such as nanoimprint and maskless lithography have also been
mentioned. In this paper, the present status of Immersion lithography will be reviewed and each of the 32nm candidates
are reviewed.
We will review the evolution of photolithography since its implementation in production of semiconductor IC devices. We will show how, at every forecast end of its existence, we have found new ways to prolong its life well beyond what was thought possible, and are now considering driving it to the limits of Physics. We will show how the development of new materials has, in almost all cases, been the enabling factor to implementation of new, lower wavelength photolithgraphies. We will discuss the factors driving the economics of lithography and how this has previously, and continues to have, a pivotal influence on which lithography technique is implemented into production. The likely limits of photolithography below 50nm resolution will be shown together with the factors likely to finally force us out of photolithography.
These days much attention is being paid to the potential of i-line lithography. We have manufactured a high numer ical aperture ( N. A. ) i-lme lens in order to study this potential. The lens specification is as follows magnification : 1/10 N. A. : 0. 65 field size : 5X5min. In this paper we first compare the difference between the image quality of g-line and i-line optics with the same resolution and then we present the results of our experiment with the new i-line lens which shows the considerable P055 ibil ity of sub-half micron 1 ithography with an i-l me optical stepper. 1.
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5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing and Testing of Micro and Nano Optical Devices and Systems
26 April 2010 | Dalian, China
SPIE Lithography Asia - Taiwan
18 November 2009 | Taipei, Taiwan
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
19 November 2008 | Chengdu, Chengdu, China
SPIE Lithography Asia - Taiwan
4 November 2008 | Taipei, Taiwan
Photomask and Next Generation Lithography Mask Technology XIV
17 April 2007 | Yokohama, Japan
Photomask and Next-Generation Lithography Mask Technology XIII
18 April 2006 | Yokohama, Japan
Photomask and Next-Generation Lithography Mask Technology XII
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