EUV lithography is one of the approaches to manufacture half-pitch 1x nm devices. It is required high CD mean control,
high CD uniformity, and low defect density for EUV mask in common with DUV mask. In addition, backside defect
density is drastically tightened to avoid overlay error in EUV scanner. PGSD (Proximity-Gap-Suction-Development), a
novel development system we developed, has kept upgrading to satisfy the demand of most-advanced devices, and
3rd-generation PGSD (PGSD Gen. III) which developed for EUV mask will be contributed to achieve required accuracy
of EUV mask. In this paper, we propose the concept of PGSD Gen. III and report its performance.
Mask development process for 2x nm node devices needs stringent CD uniformity and CD linearity. To evaluate and
improve these CD qualities, we proposed to introduce electric-field-induced-development method into proximity gap suction
development system (PGSD). It is the way to develop with applying electric potential to the metallic development nozzle to
stimulate the movement of hydroxide ions. In this paper, we will report the effect of electric-field-induced-development
method on CD uniformity and CD linearity.
Development process for 3x nm node devices and beyond is becoming a great issue in mask
fabrication. The following items, such as uniformity, repeatability, loading effect and defect must be
improved. To evolve the development process, TEL, DNP Omron and Toshiba have been jointly
developed next generation equipment which is called "Second-generation PGSD (Gen.2)".
In this paper, PGSD Gen.2 concept is introduced and its performance is reported.