Masayuki Shiraishi
Technical Expert at Nikon Corp
SPIE Involvement:
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Profile Summary

Masayuki Shiraishi received a master's degree in materials science from the University of Tokyo in 1998, for the study of photochemical hole-burning of porphyrin-derivative metallocomplexes doped in fluorophosphate glasses.
He joined Nikon Corporation in 1998 and worked on the research and development of x-ray and EUV multilayer coatings, until 2004.
Since 2004, he worked on the system development of projection optics and the study of flare derivation for EUV lithography, until 2011.
Since 2009, he also worked on the study of contamination control and modeling for EUV lithography, until 2011 when the EUV project ended.
Since 2011, he worked on the study and the system development of contamination control, sensing technologies, and thermal stabilization control for ArF and KrF lithography, until 2014.
Since 2014, he has continued the system development of the NGL (new generation lithography) technologies, mainly DSA (directed self-assembly); partially working under the consortium of EIDEC.
Since 2016, he also worked on the system development of new lithographic metrology tools, until 2017.
Since 2017, he has continued the system development of new field products.
Publications (21)

PROCEEDINGS ARTICLE | March 19, 2018
Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV
KEYWORDS: Thin films, Lithography, Electron beam lithography, Data modeling, Image processing, Annealing, 3D modeling, Signal processing, Directed self assembly, Epitaxy

PROCEEDINGS ARTICLE | March 13, 2018
Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV
KEYWORDS: Polymethylmethacrylate, Molecular bridges, Etching, Image processing, Bridges, Photomasks, Directed self assembly, Chemical analysis, Picosecond phenomena, Reactive ion etching

PROCEEDINGS ARTICLE | March 23, 2012
Proc. SPIE. 8322, Extreme Ultraviolet (EUV) Lithography III
KEYWORDS: Carbon, Apodization, Mirrors, Multilayers, Contamination, Silicon, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Oxidation

PROCEEDINGS ARTICLE | April 6, 2011
Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II
KEYWORDS: Carbon, Mirrors, Contamination, Chemical species, Photons, Molecules, Reflectivity, Oxygen, Extreme ultraviolet, Protactinium

PROCEEDINGS ARTICLE | March 23, 2010
Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography
KEYWORDS: Wafer-level optics, Point spread functions, Mirrors, Multilayers, Spatial frequencies, Light scattering, Reflectivity, Surface roughness, Extreme ultraviolet, Semiconducting wafers

PROCEEDINGS ARTICLE | March 23, 2010
Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography
KEYWORDS: Carbon, Mirrors, Light sources, Contamination, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Synchrotrons, Protactinium, Alternate lighting of surfaces

Showing 5 of 21 publications
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