In this work the results of investigation of Cd1-xMnxTe (x=0.01, 0.03, 0.05) solid solutions synthesis and their thin films' obtaining technology have been represented. Epitaxial films of monocrystalline Cd1-хMnхTe semimagnetic semiconductors were obtained on mica substrate by MBC method. Lattice parameters and crystal structure of samples were defined with X-ray diffraction method. It has been studied the electrophysical parameters. Defect formation energy has been calculated for Cd1-хMnхTe semimagnetic semiconductors by Ab-initio method using Atomistix Toolkit program. We have studied the dependence of defect formation energy on supercell size for charged vacancy and interstitial defects in Cd1-хMnхTe thin films.