KEYWORDS: Transistors, Switching, Bistability, Biomedical applications, Thin films, Thermodynamics, Solid state physics, Ions, In vivo imaging, In vitro testing
Organic electrochemical transistors (OECTs) have been shown to be excellent building blocks in a variety of applications, from digital and neuromorphic electronics, to in-vivo and in-vitro biomedical devices. Owing to a peculiar switching mechanism based on a redox reaction, the ions of an electrolyte couple with the charge carriers of the active material and unique properties, absent in other types of thin-film transistors, emerge. One such feature is a pronounced switching hysteresis, the application of which is already well known for non-volatile memory elements, but that is not adequately described by any theoretical model so far. Using a solid-state system, we show the hysteresis to be the result of an underlying bistability, and we derive a thermodynamic framework from which its presence emerges naturally. We derive predictions about its dependencies and verify them experimentally by presenting the first systematic temperature dependencies of OECTs as well as that we use the insights to eliminate the hysteresis through deliberate material changes. The model also suggests an anti-Boltzmann dependence of the subthreshold swing under certain conditions, which we have verified experimentally. Finally, we take advantage of the bistability by implementing the OECT as a Schmitt trigger, thus realizing the functionality of a comparable multicomponent circuit through a single device. This work allows us to reinterpret existing data under a new light and paves the way for using OECTs in organic, neuromorphic applications.
Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledged application potential, little is still known about the underlying physics and traditional transistor models fail to accurately describe the phenomena observed. This deficiency comes in part from the fact that such models are largely based on an electrostatic approach for metal-oxide-semiconductor field-effect transistors (MOSFETs), which is a very strong abstraction to the volumetric and complex processes in OECTs. On the other hand, material studies reveal the potential of an alternative approach, taking into account the electrochemical processes by means of thermodynamics and thus considering the OECTs intricacy. These two approaches oppose each other in explaining OECTs, neither of which can claim a comprehensive explanation of the transistor on its own so far. A unification of the two sides, on the other hand, could come much closer to a substantial explanation and provide a more accurate picture of reality. After giving a short overview of the most significant concepts of the two explanatory directions, a framework is presented that might come very close to this merger, as it accurately reproduces essential transfer properties of OECTs in terms of thermodynamics for the first time.
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