Dr. Matteo Meneghini Profile

Dr. Matteo Meneghini

at Univ degli Studi di Padova

SPIE Involvement:

Conference Program Committee | Author

Publications (29)

PROCEEDINGS ARTICLE | February 23, 2018

White-light sources based on GaN laser diodes: analysis and application study

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Optical design, Light sources, Light emitting diodes, Laser energy, Luminescence, Semiconductor lasers, Colorimetry, Gallium nitride, Light sources and illumination, Light

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PROCEEDINGS ARTICLE | February 23, 2018

Degradation processes and origin in InGaN-based high-power photodetectors

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Photodetectors, Photovoltaics, Quantum wells, External quantum efficiency, Solar cells, Reliability, Gallium nitride, Indium gallium nitride, Gallium

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PROCEEDINGS ARTICLE | February 22, 2018

Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes

Proc. SPIE. 10537, Silicon Photonics XIII

KEYWORDS: Reliability, Semiconductor lasers, Photonic integrated circuits

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PROCEEDINGS ARTICLE | February 15, 2018

Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress

Proc. SPIE. 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

KEYWORDS: Quantum wells, Light emitting diodes, Diffusion, Electroluminescence, Gallium nitride

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PROCEEDINGS ARTICLE | November 17, 2017

Internal checkup illumination sources for METIS coronagraph on solar orbiter

Proc. SPIE. 10563, International Conference on Space Optics — ICSO 2014

KEYWORDS: Telescopes, Visible radiation, Light emitting diodes, Scattering, Sensors, Photons, Polarimetry, Coronagraphy, Space telescopes, Astronomical imaging

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PROCEEDINGS ARTICLE | February 16, 2017

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

Proc. SPIE. 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

KEYWORDS: Quantum wells, Ultraviolet sources, Light emitting diodes, Magnesium, Statistical analysis, Deep ultraviolet, Spectroscopy, Quantum efficiency, Nitrogen, Electroluminescence, Optical spectroscopy, Electro optics, Spectroscopes, Internal quantum efficiency, UV optics

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PROCEEDINGS ARTICLE | February 16, 2017

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII

KEYWORDS: Metals, Interfaces, Manufacturing, Reliability, Electroluminescence, Gallium nitride, Signal processing, Transistors, Field effect transistors, Failure analysis

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PROCEEDINGS ARTICLE | February 16, 2017

Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress

Proc. SPIE. 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

KEYWORDS: Semiconductors, Light emitting diodes, LED lighting, Solid state lighting, Dielectrics, Manufacturing, Reliability, Electroluminescence, Scanning electron microscopy, Gallium nitride, Transistors, Indium gallium nitride, Failure analysis, Electrical breakdown, Blue light emitting diodes

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PROCEEDINGS ARTICLE | March 23, 2016

Adaptive multi-wavelength LED star simulator for space life studies

Proc. SPIE. 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

KEYWORDS: Light sources, Light emitting diodes, LED lighting, Sun, Stars, Spectroscopy, Organisms, Exoplanets, Planets, Astrophysics

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PROCEEDINGS ARTICLE | March 8, 2016

Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

Proc. SPIE. 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

KEYWORDS: Quantum wells, Light emitting diodes, LED lighting, External quantum efficiency, Diffusion, Reliability, Physics, Electroluminescence, Semiconductor lasers, Colorimetry, Gallium nitride, Optoelectronics, Optoelectronic devices, Light sources and illumination, Indium gallium nitride, Commercial lighting

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PROCEEDINGS ARTICLE | March 8, 2016

Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties

Proc. SPIE. 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

KEYWORDS: Thermography, Electron beam lithography, Quantum wells, Light emitting diodes, Data modeling, Indium, Quantum efficiency, Numerical simulations, Electroluminescence, Signal processing, Measurement devices, Phonons, Indium gallium nitride, Spectroscopes, Thermal modeling, Temperature metrology

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PROCEEDINGS ARTICLE | March 4, 2016

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

Proc. SPIE. 9742, Physics and Simulation of Optoelectronic Devices XXIV

KEYWORDS: Semiconductors, Nanostructures, Quantum wells, Light emitting diodes, Scattering, Electrons, Quantum efficiency, Computer simulations, Gallium nitride, Monte Carlo methods, Optoelectronics, Phonons, Quantum physics, Internal quantum efficiency

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PROCEEDINGS ARTICLE | September 23, 2015

A tunable integrated system to simulate colder stellar radiation

Proc. SPIE. 9626, Optical Systems Design 2015: Optical Design and Engineering VI

KEYWORDS: Astronomy, Light emitting diodes, Sun, Stars, Spectroscopy, Lamps, Control systems, Earth's atmosphere, Planets, Radiation effects

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In the last years, a lot of extrasolar planets have been discovered in any direction of the Galaxy. More interesting, some of them have been found in the habitable zone of their host stars. A large diversity of spectral type, from early types (A) to colder ones (M), is covered by the planetary system host stars. A lot of efforts are done in order to find habitable planets around M stars and indeed some habitable super earths were found. In this framework, “Atmosphere in a Test Tube”, a project started at Astronomical observatory of Padua, simulates planetary environmental condition in order to understand how and how much the behavior of photosynthetic bacteria in different planetary/star scenarios can modify the planet atmosphere. The particular case of an habitable planet orbiting a M dwarf star is under study for the time being. The irradiation of an M star, due to its lower surface temperature is very different in quality and quantity by the irradiation of a star like our Sun. We would like to describe the study of feasibility of a new kind of tunable led stellarlight simulator capable to recreate the radiation spectrum of M type stars (but with the potential to be expanded even to F, G, K star spectra types) incident on the planet. The radiation source is a multiple LED matrix cooled by means of air fan technology. In order to endow it with modularity this device will be composed by a mosaic of circuit boards arranged in a pie-chart shape, on the surface of which will be welded the LEDs. This concept is a smart way in order to replace blown out pieces instead of changing the entire platform as well as implement the device with new modules suitable to reproduce other type of stars. The device can be driven by a PC to raise or lower the intensity of both each LED and the lamp, in order to simulate as close as possible a portion of the star spectrum. The wavelength intervals overlap the limits of photosynthetic pigment absorption range (280-850 nm), while the range of the radiation source will be between 365 nm and 940 nm. The reason why we chose a higher outer limit is that M stars have the emission peak at about 1000 nm and we want to study the effects of low-light radiation on bacterial vitality. The innovative concept behind this radiative source is the use of the LED components to simulate the main stellar absorption lines and to make this a dynamic-light. Last but not least the use of LED is crucial to keep the device compact and handy. This device could help us to better understand the link between radiation and NIR-photosynthesis and could find applications in the field of photobioreactors as a test bench for the choice of the wavelength to be used in order to maximize the production rate. Other fields of application are the microscopy light sources field and the yeasts growth sector.

PROCEEDINGS ARTICLE | September 8, 2015

Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

Proc. SPIE. 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

KEYWORDS: Electron beam lithography, Light emitting diodes, Silicon, Gallium nitride, Sapphire, Diodes, Phonons, Analytical research, Silicon carbide, Electro optical modeling

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PROCEEDINGS ARTICLE | March 13, 2015

Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Light emitting diodes, Spectroscopy, Indium, Silicon, Nitrogen, Gallium nitride, Capacitance, Molecular beam epitaxy, Temperature metrology, Nanowires

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PROCEEDINGS ARTICLE | March 13, 2015

Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Carbon, Iron, Electrons, Nitrogen, Doping, Gallium nitride, Transistors, Field effect transistors, Semiconducting wafers, Heterojunctions

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PROCEEDINGS ARTICLE | March 9, 2015

Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability

Proc. SPIE. 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

KEYWORDS: Light emitting diodes, Reliability, Semiconductor lasers, Gallium nitride, Optoelectronic devices, Laser damage threshold, Indium gallium nitride, Semiconducting wafers, Spectroscopes, Internal quantum efficiency

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PROCEEDINGS ARTICLE | March 8, 2014

Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress

Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX

KEYWORDS: Quantum wells, Luminescence, Diffusion, Quantum efficiency, Semiconductor lasers, Gallium nitride, Laser damage threshold, Indium gallium nitride, Electro optics, Spectroscopes

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PROCEEDINGS ARTICLE | February 27, 2014

Thermal, optical, and electrical engineering of an innovative tunable white LED light engine

Proc. SPIE. 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

KEYWORDS: Thermography, Optical design, Light emitting diodes, LED lighting, Resistance, Light sources and illumination, Electrical engineering, Heatsinks, Compound semiconductors, Temperature metrology

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PROCEEDINGS ARTICLE | March 27, 2013

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Light emitting diodes, Magnesium, Statistical analysis, Annealing, Luminescence, Crystals, Ions, Mass spectrometry, Gallium nitride, Temperature metrology

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PROCEEDINGS ARTICLE | March 4, 2013

Characterization and endurance study of aluminate/silicate/garnet/nitride phosphors for high-performance SSL

Proc. SPIE. 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII

KEYWORDS: Infrared cameras, Thermography, Light emitting diodes, Solid state lighting, Reliability, Transmittance, Luminous efficiency, Luminous efficacy, Temperature metrology, Blue light emitting diodes

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PROCEEDINGS ARTICLE | February 28, 2012

Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Light emitting diodes, Statistical analysis, Cladding, Semiconductor lasers, Gallium nitride, Laser damage threshold, Semiconducting wafers, Active optics, Spectroscopes, Temperature metrology

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PROCEEDINGS ARTICLE | February 6, 2012

Innovative methodology for testing the reliability of LED based systems

Proc. SPIE. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

KEYWORDS: Thermography, Light emitting diodes, Solid state lighting, Reliability, Resistance, Semiconductor lasers, Failure analysis, Standards development, Temperature metrology, Laser systems engineering

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PROCEEDINGS ARTICLE | March 4, 2011

Recent results on the physical origin of the degradation of GaN-based LEDs and lasers

Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI

KEYWORDS: Mirrors, Light emitting diodes, Statistical analysis, Diffusion, Semiconductor lasers, Gallium nitride, Laser damage threshold, Semiconducting wafers, Laser optics, Active optics

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PROCEEDINGS ARTICLE | February 12, 2010

A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs

Proc. SPIE. 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

KEYWORDS: Light emitting diodes, Statistical analysis, Microscopy, Luminescence, Reliability, Gallium nitride, Indium gallium nitride, Green light emitting diodes, Electro optics, Photomicroscopy

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PROCEEDINGS ARTICLE | August 18, 2009

Extensive analysis of the degradation of phosphor-converted LEDs

Proc. SPIE. 7422, Ninth International Conference on Solid State Lighting

KEYWORDS: Light emitting diodes, Statistical analysis, Optical properties, Solid state lighting, Microscopy, Reliability, Resistance, Colorimetry, Failure analysis, Temperature metrology

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PROCEEDINGS ARTICLE | September 14, 2007

Thermal stability analysis of high brightness LED during high temperature and electrical aging

Proc. SPIE. 6669, Seventh International Conference on Solid State Lighting

KEYWORDS: Reflectors, Light emitting diodes, Optical properties, Copper, Reliability, Resistance, Electroluminescence, Optical testing, Measurement devices, Temperature metrology

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PROCEEDINGS ARTICLE | September 12, 2006

Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions

Proc. SPIE. 6337, Sixth International Conference on Solid State Lighting

KEYWORDS: Thermography, Light emitting diodes, Statistical analysis, Resistance, Electroluminescence, Optical testing, Gallium nitride, Failure analysis, Temperature metrology, Blue light emitting diodes

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PROCEEDINGS ARTICLE | October 20, 2004

Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy

Proc. SPIE. 5530, Fourth International Conference on Solid State Lighting

KEYWORDS: Quantum wells, Light emitting diodes, Spectroscopy, Doping, Electroluminescence, Optical testing, Gallium nitride, Capacitance, Spectroscopes, Temperature metrology

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Showing 5 of 29 publications

Conference Committee Involvement (3)

Light-Emitting Devices, Materials, and Applications for Illumination, Information, and Beyond

2 February 2019 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

29 January 2018 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

30 January 2017 | San Francisco, California, United States

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