Dr. Matthias Sabathil
at OSRAM Opto Semiconductors GmbH
SPIE Involvement:
Author
Publications (5)

Proceedings Article | 28 February 2012 Paper
Proc. SPIE. 8255, Physics and Simulation of Optoelectronic Devices XX
KEYWORDS: Light emitting diodes, Quantum wells, Luminescence, Absorption, Gallium nitride, Quantum efficiency, Polarization, Internal quantum efficiency, Quantization, Nanowires

Proceedings Article | 21 February 2011 Paper
Proc. SPIE. 7933, Physics and Simulation of Optoelectronic Devices XIX
KEYWORDS: Gallium nitride, Interfaces, Light emitting diodes, Optical properties, Cladding, Mirrors, Silver, Refractive index, Phase shifts, Nanorods

Proceedings Article | 19 February 2009 Paper
Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV
KEYWORDS: Temperature metrology, Semiconductor lasers, Laser damage threshold, Indium gallium nitride, Quantum wells, Resistance, Continuous wave operation, Doping, Cell phones, Laser applications

Proceedings Article | 13 February 2007 Paper
Proc. SPIE. 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI
KEYWORDS: Quantum wells, Indium gallium nitride, Electrons, Electroluminescence, Light emitting diodes, Doping, Luminescence, Absorption, Indium, Data modeling

Proceedings Article | 13 February 2007 Paper
Proc. SPIE. 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI
KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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