Recently, immense interest in the semiconductor Ga₂O₃ arose due to its large bandgap and high predicted electrical breakdown field. By alloying Ga₂O₃ with In₂O₃ or Al₂O₃, its bandgap can be tuned over a large range, allowing possible applications in heterostructure devices or devices with an adjusted absorption energy. For this purpose, property screening over a large composition range is crucial.
In this contribution, we present electrical, optical and structural properties of (Ga,In)₂O₃ and (Ga,Al)₂O₃ thin films grown by continuous composition spread pulsed laser deposition. The influence of growth parameters on phase boundaries were investigated and unipolar devices were fabricated.