Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII
KEYWORDS: Oxides, Metrology, Data modeling, Calibration, Etching, Metals, Resistance, Photoresist materials, Finite element methods, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optical proximity correction, Semiconducting wafers, Back end of line
Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.