Mr. Maxence P. Delorme Profile

Maxence P. Delorme

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Author

Publications (11)

Proceedings Article | 10 April 2024 Presentation + Paper

EUV OPC modeling of dry photoresist system for pitch 32nm BEOL

Jyun-Ming Chen, David Rio, Maxence Delorme, Cyrus Tabery, Christoph Hennerkes, Chris Spence, Benjamin Kam, Mohand Brouri, Nader Shamma

Proceedings Volume 12953, 129530C (2024) https://doi.org/10.1117/12.3010402

KEYWORDS: Photoresist materials, Optical proximity correction, Calibration, Semiconducting wafers, Shrinkage, Printing, Scanning electron microscopy, Photoresist developing, Metals, Critical dimension metrology

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SPIE Journal Paper | 25 November 2022

Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask

Dongbo Xu, Werner Gillijns, Ling Ee Tan, David Rio, Max Delorme, Vicky Philipsen, Ryoung-han Kim

JM3, Vol. 21, Issue 04, 043202, (November 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.043202

KEYWORDS: Photomasks, Design and modelling, Optical lithography, Metals, Binary data, SRAF, Critical dimension metrology, Extreme ultraviolet, Printing, Logic

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Proceedings Article | 16 September 2022 Paper

Curvilinear EUV mask: development of innovative mask metrology

Maxence Delorme, Werner Gillijns, Christoph Hennerkes, Emily Gallagher, Adam Lyons, Mahmoud Mohsen, Tom Wallow

Proceedings Volume 12325, 123250L (2022) https://doi.org/10.1117/12.2642867

KEYWORDS: Photomasks, Optical proximity correction, Metrology, Scanning electron microscopy, Logic, Distortion, Extreme ultraviolet, Critical dimension metrology

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Recent developments in multi-beam mask writers (MBMW)1 enable the manufacturing of curvilinear masks. This promises higher patterning accuracy on wafer. The increased patterning flexibility takes us into new territories for mask manufacturing accuracy, precision and Mask Rule Check (MRC). MBMW allows Optical Proximity Correction (OPC) to venture into Inverse Lithography Technology (ILT) solutions, enabling accurate curvilinear masks. New challenges are also encountered when building OPC models that target ILT masks, such as on wafer metrology and pattern coverage. This exploration will be the focus of this study, in particular the MRC and mask characterization aspects, leveraging a new curvilinear reticle available at imec. As a result of its fully curvilinear nature, conventional mask metrology – solely based on cutline CDs – is no longer entirely adequate. Therefore, a new metrology flow must be developed to assess and quantify mask errors, relying on mask SEM image contour extraction and Mask Edge Placement Error (MEPE) evaluations. Our proposed flow has three steps: -Mask CDSEM images are loaded into a software, which enables an accurate contour extraction and alignment to the original design. The output of this exercise is a design file with open contours. - The output design file is converted into polygons (i.e., defining inside/outside polygons areas) by utilizing the original design as a guide. This allows for full compatibility with the next stage. -Lastly, a highly-sampled MEPE is determined for all polygons, both from the main and assisting features. The result is then analyzed offline. Ultimately, this curvilinear mask data analysis sequence was used on several subsets of the mask metrology dataset. In order to validate the approach, we reproduced the CD based metrology provided by the mask shop. We then expanded our scope to parametric curvilinear features, to find correlators (i.e. local design properties) to the observed mask error observed (e.g., polygon local curvature or density). Finally, ILT clips were used to verify the determined correlators.

Proceedings Article | 26 May 2022 Paper

Logic via printability enhancement using restricted via placement and exhaustive SRAF placement on a staggered grid

Pieter Wöltgens, Alberto Colina, David Rio, Maxence Delorme, Tatiana Kovalevich, Arame Thiam, Frieda van Roey, Odysseas Zografos

Proceedings Volume 12051, 120510I (2022) https://doi.org/10.1117/12.2614260

KEYWORDS: SRAF, Logic, Semiconducting wafers, Lithography, Photomasks, Optical proximity correction, Critical dimension metrology, Printing, Extreme ultraviolet lithography, Statistical analysis

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Proceedings Article | 5 March 2022 Presentation + Paper

Improving silicon-photonics inverse-design printability by leveraging SEM contours for advanced Optical Proximity Correction techniques

Youssef Drissi, Werner Gillijns, Sebastien Lardenois, Peter Verheyen, Guy Lepage, Mahmoud Mohsen, Maxence Delorme

Proceedings Volume 12012, 1201208 (2022) https://doi.org/10.1117/12.2609092

KEYWORDS: Optical proximity correction, Scanning electron microscopy, Semiconducting wafers, Silicon photonics, Photomasks, Metrology, Manufacturing, Silicon, Etching, Resolution enhancement technologies

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Proceedings Article | 28 September 2021 Presentation

Contour-based variability decomposition for stochastic band metrology

Thomas Wallow, Jiyou Fu, Jiao Liang, Jen-Shiang Wang, Jimmy Fan, Maxence Delorme, ChangAn Wang, Fahong Li, Vivek Jain, Rui Yuan

Proceedings Volume 11854, 118540E (2021) https://doi.org/10.1117/12.2601587

KEYWORDS: Metrology, Stochastic processes, Photomasks, Model-based design, Scanning electron microscopy, Line edge roughness, Optical lithography, Semiconducting wafers, Extreme ultraviolet, Wafer-level optics

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Proceedings Article | 22 February 2021 Presentation + Paper

Stochastic defect criticality prediction enabled by physical stochastic modeling and massive metrology

ChangAn Wang, Peigen Cao, Maxence Delorme, Jen-Yi Wuu, Jiyou Fu, Fuming Wang, Bob Lin, Yiqiong Zhao, Yi-Hsing Peng, Yongfa Fan, Mu Feng, Bin Cheng, Jen-Shiang Wang, Mark Simmoms, Stefan Hunsche, Oliver Patterson, Kuo-Feng Pao, Abdalmohsen Elmalk, Kevin Gao, Ruochong Fei, Xuefeng Zeng, Xiaolong Zhang

Proceedings Volume 11609, 1160916 (2021) https://doi.org/10.1117/12.2584767

KEYWORDS: Stochastic processes, Pattern recognition, Semiconducting wafers, Wafer inspection, Inspection, Defect detection, Metrology, Failure analysis, Data modeling, Calibration

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Proceedings Article | 22 February 2021 Poster + Presentation + Paper

NXE:3400 OPC process monitoring: model validity vs process variability

Dongbo Xu, David Rio, Werner Gillijns, Max Delorme, Christina Baerts

Proceedings Volume 11609, 116091N (2021) https://doi.org/10.1117/12.2583870

KEYWORDS: Process modeling, OLE for process control, Optical proximity correction, SRAF, Semiconducting wafers, Scanners, Critical dimension metrology, Scanning electron microscopy, Process control, Finite element methods

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Proceedings Article | 22 February 2021 Presentation + Paper

Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations

D. Rio, P. Van Adrichem, M. Delorme, K. Lyakhova, C. Spence, J.-H. Franke

Proceedings Volume 11609, 116090T (2021) https://doi.org/10.1117/12.2583800

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Proceedings Article | 13 October 2020 Poster + Paper

Mask contribution to OPC model accuracy

Adam Lyons, Tom Wallow, Christoph Hennerkes, Chris Spence, Maxence Delorme, David Rio, Dai Tsunoda, Yohei Torigoe, Masakazu Hamaji

Proceedings Volume 11517, 115171D (2020) https://doi.org/10.1117/12.2573160

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Process modeling, Extreme ultraviolet, Semiconducting wafers, Metrology, Calibration, Finite element methods

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Proceedings Article | 27 March 2017 Presentation + Paper

Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer

Adam Lyons, David Rio, Sook Lee, Thomas Wallow, Maxence Delorme, Anita Fumar-Pici, Michael Kocsis, Peter de Schepper, Michael Greer, Jason Stowers, Werner Gillijns, Danilo De Simone, Joost Bekaert

Proceedings Volume 10143, 101431E (2017) https://doi.org/10.1117/12.2260441

KEYWORDS: Optical proximity correction, Metals, Oxides, Back end of line, Extreme ultraviolet, Photomasks, Etching, Resistance, Photoresist materials, Extreme ultraviolet lithography, Calibration, Data modeling, Semiconducting wafers, Metrology, Finite element methods

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Showing 5 of 11 publications

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