CONFERENCE PROCEEDINGS
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Dr. Maxim A. Remennyy
at Ioffe Institute
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Author
Publications (4)
Proceedings Article | 26 February 2010 Paper
Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
B. Matveev, A. Ankudinov, N. Zotova, S. Karandashev, T. L'vova, M. Remennyy, A. Yu. Rybal'chenko, N. Stus'
Proceedings Volume 7597, 75970G (2010) https://doi.org/10.1117/12.841625
KEYWORDS: Light emitting diodes, Heterojunctions, Interfaces, Diodes, Infrared imaging, Infrared radiation, Mid-IR, Resistance, Modulation, Atomic force microscopy
Proceedings Article | 24 February 2010 Paper
InGaAsSb LED arrays (lambda = 3.7 µm) with photonic crystals
B. Matveev, Yu. Zadiranov, A. Zakgeim, N. Il'inskaya, S. Karandashev, M. Remennyy, N. Stus', A. Usikova, A. Cherniakov
Proceedings Volume 7609, 76090I (2010) https://doi.org/10.1117/12.841689
KEYWORDS: Light emitting diodes, Silicon, Photonic crystals, Indium gallium arsenide antimonide, LED displays, Infrared imaging, Mid-IR, Diffraction, Reflection, Diodes
Proceedings Article | 16 February 2009 Paper
Midinfrared (lambda = 3.6 um) LEDs and arrays on InGaAsSb with photonic crystals
B. Matveev, Yu. Zadiranov, A. Zakgeim, N. Zotova, N. Il'inskaya, S. Karandashev, M. Remennyy, N. Stus', A. Usikova, O. Usov, A. Cherniakov
Proceedings Volume 7223, 72231B (2009) https://doi.org/10.1117/12.808130
KEYWORDS: Light emitting diodes, Indium gallium arsenide antimonide, Photonic crystals, Resistance, Reflectivity, Silicon, Infrared imaging, Thermography, Heterojunctions, Mid-IR
Proceedings Article | 1 May 2007 Paper
InAs and InAs(Sb)(P) (3-5 microns) immersion lens photodiodes for portable optic sensors
M. Remennyy, B. Matveev, N. Zotova, S. Karandashev, N. Stus, N. Ilinskaya
Proceedings Volume 6585, 658504 (2007) https://doi.org/10.1117/12.722847
KEYWORDS: Indium arsenide, Photodiodes, Diodes, Indium arsenide antimonide phosphide, Palladium, Sensors, Diffusion, Temperature metrology, Silicon, Light emitting diodes
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