A high-performance of a planar hetejunction structure is demonstrated by using Fullerene (C60) and Boron Subphthalocyanine Chloride (SubPc) sandwiched between a cathode and an anode, indium tin oxide (ITO) and aluminum (Al), respectively. Often, there will also exist a buffer layer such as Poly 3,4-EthyleneDioxyThiophene : Poly- Styrene Sulphonate (PEDOT:PSS) and Bathocuproine (BCP) between any active layer and adjacent electrode, which is responsible for increasing efficiency through modifying the work function and controlling exciton diffusion. The cell that we studied is composed of the following structure: ITO(30nm)/PEDOT:PSS(xnm)/SubPc(25nm)/C60(35nm)/BCP(ynm)/Al(30nm), with different value of x=5,10,12,15,20 nm and y=8,10,12,14,16nm. So, the aim of our work is to investigate the effect of PEDOT: PSS and BCP thicknesses on the efficiency of this organic solar cell.
In order to optimize the device performance it is very important to have knowledge about intrinsic properties,
particularly the charge transport and charge injection properties. One of the basic methods to investigate the charge
transport in interface metal/organic semiconductors is to determine the dark current density voltage characteristic (J-V),
where the important effects which describe that transport mechanism are the space charge, trapping and Schottky effects
. The interface trap density effect on dark J-V characteristics of fullerene (C60) Schottky diode is investigated here for
different electrodes LiF/Al, Al, Ag and Pt. The C60/LiF/Al interface has been found to exhibit the ohmic interface type
junction in C60 electronic only diode. We have a good agreement with the experimental results.