Mr. Medhat A. Toukhy Profile

Medhat A. Toukhy

Staff Scientist at EMD Electronics

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Author

Publications (39)

Proceedings Article | 20 March 2012 Paper

Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions

Jihoon Kim, Ruzhi Zhang, Elizabeth Wolfer, Bharatkumar Patel, Medhat Toukhy, Zachary Bogusz, Tatsuro Nagahara

Proceedings Volume 8325, 83252A (2012) https://doi.org/10.1117/12.916453

KEYWORDS: Dielectrics, Lithography, Semiconducting wafers, Critical dimension metrology, Polymers, Photoresist materials, Image processing, Coating, Semiconductor manufacturing, Photoresist developing

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Proceedings Article | 16 April 2011 Paper

A study on post-exposure delay of negative tone resist and its chemistry

Medhat Toukhy, Margareta Paunescu, Chunwei Chen

Proceedings Volume 7972, 79721L (2011) https://doi.org/10.1117/12.882072

KEYWORDS: Critical dimension metrology, Contamination, Photoresist processing, Semiconducting wafers, Chemistry, Polymers, Inspection, Diffusion, Lithography, Deep ultraviolet

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Proceedings Article | 30 March 2010 Paper

Improved thermal flow characteristic resist optimized for the manufacturing of microlenses

Medhat Toukhy, Margareta Puanescu, Stephen Meyer

Proceedings Volume 7639, 763911 (2010) https://doi.org/10.1117/12.848250

KEYWORDS: Microlens, Photoresist processing, Spherical lenses, Silicon, Contact lenses, Lenses, Coating, Fourier transforms, Etching, Manufacturing

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Proceedings Article | 1 April 2009 Paper

Chemically amplified hybrid resist platform for i-line applications

Medhat Toukhy, Margareta Paunescu, Zachary Bogusz, Georg Pawlowski

Proceedings Volume 7273, 72730J (2009) https://doi.org/10.1117/12.816044

KEYWORDS: Polymers, Copper, Silicon, Coating, Photoresist processing, Gold, Fourier transforms, Plating, Chemistry, Semiconducting wafers

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Proceedings Article | 26 March 2008 Paper

Performance comparison of negative resists for copper rerouting and other electroplating applications

Medhat Toukhy, Chunwei Chen, Margareta Paunescu, Georg Pawlowski

Proceedings Volume 6923, 69233I (2008) https://doi.org/10.1117/12.773965

KEYWORDS: Copper, Semiconducting wafers, Photoresist processing, Electroplating, Plating, Thin film coatings, Oxygen, Lithography, Silicon, Chemistry

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Proceedings Article | 2 April 2007 Paper

Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography

Francis Houlihan, Alberto Dioses, Medhat Toukhy, Andrew Romano, Joseph Oberlander, HengPeng Wu, Salem Mullen, Alexandra Krawicz, PingHung Lu, Mark Neisser

Proceedings Volume 6519, 65190L (2007) https://doi.org/10.1117/12.713436

KEYWORDS: Arsenic, Resistance, Fluorine, Polymers, Prototyping, Lithography, Photoresist processing, Semiconducting wafers, Fourier transforms, Bottom antireflective coatings

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Proceedings Article | 2 April 2007 Paper

PAG distribution and acid thermal diffusion study in ultra-thick chemically amplified resist films

Medhat Toukhy, Margareta Paunescu, Chunwei Chen, Georg Pawlowski

Proceedings Volume 6519, 65192M (2007) https://doi.org/10.1117/12.711621

KEYWORDS: Copper, Diffusion, Semiconducting wafers, Silicon, Coating, Polymers, Chemically amplified resists, Polymer thin films, Molecules, Fluorine

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Proceedings Article | 23 March 2007 Paper

Radiation sensitive developable bottom anti-reflective coating (DBARC) for 193nm lithography: first generation

Medhat Toukhy, Joseph Oberlander, Salem Mullen, PingHung Lu, Mark Neisser

Proceedings Volume 6519, 651936 (2007) https://doi.org/10.1117/12.717114

KEYWORDS: Polymers, Coating, 193nm lithography, Lithography, Photoresist processing, Bottom antireflective coatings, Semiconducting wafers, Standards development, Image processing, Plasma etching

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Proceedings Article | 29 March 2006 Paper

Chemically amplified thick film i-line positive resist for electroplating and redistribution applications

Medhat Toukhy, Salem Mullen, Margareta Paunescu, Chunwei Chen, Stephen Meyer, Georg Pawlowski, Yoshio Murakami, Clifford Hamel

Proceedings Volume 6153, 61534H (2006) https://doi.org/10.1117/12.656595

KEYWORDS: Copper, Semiconducting wafers, Silicon, Plating, Electroplating, Photoresist processing, Chemistry, Polymers, Temperature metrology, Optical coatings

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Proceedings Article | 4 May 2005 Paper

All i-line lift-off T-gate process and materials

Medhat Toukhy, Ping-Hung Lu, Salem Mullen

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.602636

KEYWORDS: Photoresist processing, Metals, Coating, Materials processing, Gallium arsenide, Diffusion, Semiconducting wafers, Lithography, Fourier transforms, Photomasks

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Proceedings Article | 28 May 2004 Paper

Modeling of reactive soluble ARCs and photoresist-ARC interaction

John Biafore, Mark Neisser, Gary dela Pena, Jeffrey Byers, Medhat Toukhy, Joseph Oberlander

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536748

KEYWORDS: Diffusion, Mathematical modeling, Photoresist materials, Composites, Dubnium, Photoresist developing, Amplifiers, Computer simulations, Data modeling, Antireflective coatings

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Proceedings Article | 28 May 2004 Paper

Developable bottom antireflective coatings for 248-nm and 193-nm lithography

Tomohide Katayama, Hisashi Motobayashi, Wen-Bing Kang, Medhat Toukhy, Joseph Oberlander, Shuji Ding, Mark Neisser

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537539

KEYWORDS: Lithography, Silicon, Semiconducting wafers, 193nm lithography, Polymers, Bottom antireflective coatings, Dry etching, Process control, Electroluminescence, Absorbance

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Proceedings Article | 14 May 2004 Paper

High-temperature negative resist tunable for new lift-off applications

Medhat Toukhy, PingHung Lu, Kate Kao, Robert Plass, Ching-Hui Chen, Gerald Faerber

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537561

KEYWORDS: Photoresist processing, Metals, Semiconducting wafers, Lithography, 193nm lithography, Deep ultraviolet, Organic light emitting diodes, Deposition processes, Resistance, Chemistry

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Proceedings Article | 14 May 2004 Paper

A study on the dissolution inhibition of poly norbornene hexafluoroisopropanol in aqueous base solutions

Medhat Toukhy, Joseph Oberlander, Dalil Rahman, Francis Houlihan

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537077

KEYWORDS: Polymers, Hydrogen, Molecules, Lithography, 193nm lithography, Molybdenum, Absorption, Silicon, Semiconducting wafers, Solids

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Proceedings Article | 12 June 2003 Paper

TMAH soak process optimization with DNQ positive resist for lift-off applications

Salem Mullen, Medhat Toukhy, Ping-Hung Lu, Sunit Dixit, Paul Sellers

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485198

KEYWORDS: Photoresist processing, Standards development, Semiconducting wafers, Floods, Photoresist developing, Metals, Scanning electron microscopy, Photoresist materials, Coating, Metrology

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Proceedings Article | 24 July 2002 Paper

High resolution negative i-line resist and process for metal lift-off applications

Medhat Toukhy, Salem Mullen, Ping-Hung Lu, Mark Neisser

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474287

KEYWORDS: Absorption, Photoresist processing, Metals, Polymers, Resolution enhancement technologies, Semiconducting wafers, Image processing, Gallium arsenide, Lithography, Resist chemistry

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Proceedings Article | 24 August 2001 Paper

Formulation optimizations for variable DUV resist thickness applications based on the same polymer matrix

Karin Schlicht, Brian Maxwell, John Ferri, Medhat Toukhy

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436895

KEYWORDS: Absorption, Polymers, Coating, Deep ultraviolet, Reflectivity, Photoresist processing, Silicon, Electroluminescence, Structural design, Carbon

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Proceedings Article | 23 June 2000 Paper

Manipulation of chemically amplified resist dissolution rate behavior for improved performance

Medhat Toukhy, Karin Schlicht, Brian Maxwell, Somboun Chanthalyma

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388349

KEYWORDS: Polymers, Lithography, Absorption, Chemically amplified resists, Photoresist processing, Polymer thin films, Switching, Photolysis, Molecules, Bismuth

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Proceedings Article | 11 June 1999 Paper

Formulation robustness of a chemically amplified ESCAP-type resist based on hydroxystyrene/t-butyl acrylate copolymer

Medhat Toukhy, S. Chnthalyma, D. Khan, G. McCormick, T. Jayaraman, Veerle Van Driessche

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350260

KEYWORDS: Photoresist processing, Tolerancing, Polymers, Manufacturing, Deep ultraviolet, Temperature metrology, Resist chemistry, Semiconducting wafers, Inspection, Scanning electron microscopy

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Proceedings Article | 11 June 1999 Paper

Effect of developer normality on the resist dissolution rate and performance

Medhat Toukhy, Brian Maxwell, Somboun Chanthalyma

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350259

KEYWORDS: Standards development, Deep ultraviolet, Data modeling, Chemistry, Photoresist processing, Semiconducting wafers, Systems modeling, Lithography, Silicon, Mathematical modeling

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Proceedings Article | 29 June 1998 Paper

Structural basis for high thermal stability of a resist

Sanjay Malik, Andrew Blakeney, Lawrence Ferreira, Medhat Toukhy, John Ferri

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312478

KEYWORDS: Hydrogen, Polymers, Lithography, Photoresist materials, Spectroscopy, Picture Archiving and Communication System, Carbon, Temperature metrology, Semiconducting wafers, Silicon

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Proceedings Article | 29 June 1998 Paper

Chemically amplified resist technology for i-line applications

Medhat Toukhy, Sanjay Malik, Andrew Blakeney, Karin Schlicht

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312371

KEYWORDS: Deep ultraviolet, Chemistry, Resist chemistry, Chemically amplified resists, Lithography, Scanners, Polymers, Diffusion, Photoresist processing, Picture Archiving and Communication System

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Proceedings Article | 7 July 1997 Paper

Chemical optimization of resist/developer systems tuned for sub-0.4-um process window expansion

Medhat Toukhy, Karin Schlicht, Kimberly Tarbox

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275891

KEYWORDS: Diffusion, Luminescence, Polymer thin films, Sensors, Quartz, Polymers, Photoresist materials, Critical dimension metrology, In situ metrology, Data analysis

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In order to perform 0.2 micrometer processes, one needs to study the diffusion of photoacid generators within the photoresist system, since diffusion during post exposure bake time has an influence on the critical dimension (CD). We have developed a new method to study the diffusion of photoacid generators within a polymer film. This new method is based on monitoring the change of the fluorescence intensity of a pH- sensitive fluorescent dye caused by the reaction with photoacid. A simplified version of this experiment has been conducted by introducing acid vapor to quench the fluorescence intensity of this pH sensor. A thin polymer film is spin cast onto the sensor to create a barrier to the acid diffusion process. During the acid diffusion process, the fluorescence intensity of this pH sensor is measured in situ, using excitation and emission wavelengths at 466 nm and 516 nm, respectively. Fluoresceinamine, the pH sensitive fluorescent dye, is covalently bonded onto the treated quartz substrate to form a single dye layer. Poly(hydroxystyrene) (M_n equals 13k, T_g equals 180 degrees Celsius) in PGMEA (5% - 18% by weight) is spin cast onto this quartz substrate to form films with varying thickness. The soft bake time is 60 seconds at 90 degrees Celsius and a typical film has a thickness of 1.4 micrometers. Trifluoroacetic acid is introduced into a small chamber while the fluorescence from this quartz window is observed. Our study focuses on finding the diffusion constant of the vaporized acid (trifluoroacetic acid) in the poly(hydroxystyrene) polymer film. By applying the Fick's second law, (I_t - I_o)/(I_(infinity ) - I_o) equals erfc [L/(Dt)^1/2] is obtained. The change of fluorescence intensity with respect to the diffusion time is monitored. The above equation is used for the data analysis, where L represents the film thickness and t represents the average time for the acid to diffuse through the film. The diffusion constant is calculated to be at the order of 10^-10 cm²/s to 10^-12 cm²/s. All the experiments are conducted at room temperature and are valid only for acid vapor. With different film thickness, it was found that the acid diffuses through the film with a similar diffusion constant. The diffusion is faster with increased solvent residue in the film (controlled by spin coating speed). The theoretical computer modeling of the local acid concentration with respect to acid diffusion is also performed.

Proceedings Article | 7 July 1997 Paper

Design and process of a new DUV ARCH3 resist

N. Bantu, Brian Maxwell, Arturo Medina, Thomas Sarubbi, Medhat Toukhy, Hans-Thomas Schacht, Pasquale Falcigno, Norbert Muenzel, Klaus Petschel, Francis Houlihan, Omkaram Nalamasu, Allen Timko

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275833

KEYWORDS: Polymers, Photoresist materials, Deep ultraviolet, Lithography, Photoresist processing, Chemistry, Photoresist developing, Scanning electron microscopy, Glasses, Resolution enhancement technologies

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Proceedings Article | 7 July 1997 Paper

Robust i-line resist engineering using neural network and statistical design applications

Medhat Toukhy, David Brzozowy

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275838

KEYWORDS: Picture Archiving and Communication System, Lithography, Neural networks, Manufacturing, Tolerancing, Semiconducting wafers, Statistical analysis, Error analysis, Product engineering, Optimization (mathematics)

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Proceedings Article | 14 June 1996 Paper

Novel class of highly selective divanillin-based PACs

Arturo Medina, Lawrence Ferreira, Sobhy Tadros, Joseph Sizensky, M. Fregeolle, Andrew Blakeney, Medhat Toukhy

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241843

KEYWORDS: Picture Archiving and Communication System, Lithography, Hydrogen, Electrons, Molecular interactions, Carbon, Antimony, Water, Solids, Chlorine

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Proceedings Article | 14 June 1996 Paper

Standing waves reducing additives

Medhat Toukhy, G. McCormick

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241852

KEYWORDS: Picture Archiving and Communication System, Silicon, Molecules, Semiconducting wafers, Photoresist processing, Solids, Thermal effects, Reflectivity, Chlorine, Microelectronics

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Proceedings Article | 14 June 1996 Paper

High-throughput process optimization using the EZ technique

Medhat Toukhy, Karin Schlicht, Patricia Morra, Somboun Chanthalyma

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241863

KEYWORDS: Lithography, Photoresist processing, Semiconducting wafers, Standards development, Statistical analysis, Statistical modeling, Materials processing, Manufacturing, Data modeling, Scanning electron microscopy

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Proceedings Article | 9 June 1995 Paper

Molecular simulation of photoresists II: application to PAC diffusion

Andrew Blakeney, Lawrence Ferreira, Medhat Toukhy, Patricia Morra, Nicholas Reynolds

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210388

KEYWORDS: Picture Archiving and Communication System, Diffusion, Molecules, Visualization, Computer simulations, Polymers, Molecular interactions, Chemical species, Photoresist materials, Semiconducting wafers

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Proceedings Article | 9 June 1995 Paper

Effect of PAC structure and resist morphology on the control of surface inhibition in positive photoresist systems

Bernard Beauchemin, Rodney Hurditch, Medhat Toukhy, Andrew Blakeney

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210349

KEYWORDS: Picture Archiving and Communication System, Polymers, Diffusion, Skin, Photoresist materials, Molecules, Control systems, Fourier transforms, Switching, Photoresist processing

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Proceedings Article | 16 May 1994 Paper

Influence of post exposure bake on resist contrast

Medhat Toukhy, Steven Hansen

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175376

KEYWORDS: Picture Archiving and Communication System, Silicon, Lithography, Diffusion, Reflectivity, Semiconducting wafers, Photoresist processing, Chemical reactions, Temperature metrology, Molecules

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Proceedings Article | 16 May 1994 Paper

Dissolution behavior of the chemically modified polyvinylphenol with introduced high-ortho structure

Kenji Honda, Sydney Slater, Bernard Beauchemin, Medhat Toukhy, Sobhy Tadros, Toshiaki Aoai, Yasumasa Kawabe

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175367

KEYWORDS: Polymers, Hydrogen, Diffusion, Spectroscopy, Coating, Lithography, Chemistry, Carbon, Magnetism, Liquids

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Proceedings Article | 16 May 1994 Paper

Reliability of photospeed and related measures of resist performances

Karin Schlicht, Patricia Scialdone, Peggy Spragg, Steven Hansen, Rodney Hurditch, Medhat Toukhy, David Brzozowy

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175375

KEYWORDS: Lithography, Standards development, Semiconducting wafers, Picture Archiving and Communication System, Photoresist materials, Photoresist processing, Reliability, Photoresist developing, Manufacturing, Photomasks

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Proceedings Article | 15 September 1993 Paper

Experimental investigation of high-focus latitude concepts

Medhat Toukhy, Sydney Slater, John Ferri

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154782

KEYWORDS: Deep ultraviolet, Chemically amplified resists, Scanning electron microscopy, Picture Archiving and Communication System, Absorption, Tolerancing, Lithography, Critical dimension metrology, Polymers, Chemistry

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Proceedings Article | 1 June 1992 Paper

Experimental investigation of a novel dissolution model

Medhat Toukhy, Steven Hansen, Rodney Hurditch, Chris Mack

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59759

KEYWORDS: Picture Archiving and Communication System, Data modeling, Lithography, Systems modeling, Photoresist materials, Photoresist processing, Photomasks, Semiconducting wafers, Diffusion, Data analysis

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Proceedings Article | 1 June 1992 Paper

Selectively DNQ-esterified PAC for high-performance positive photoresists

Kazuya Uenishi, Shinji Sakaguchi, Yasumasa Kawabe, Tadayoshi Kokubo, Medhat Toukhy, Alfred Jeffries, Sydney Slater, Rodney Hurditch

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59735

KEYWORDS: Picture Archiving and Communication System, Molecules, Lithography, Solids, Photoresist materials, Microelectronics, Coating, Cesium, Image resolution, Photomasks

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Proceedings Article | 1 June 1992 Paper

Optimization of positive novolak-based resists for phase-shift mask technology

Peggy Spragg, Giang Dao, Steven Hansen, Robert Leonard, Medhat Toukhy, Rajeev Singh, Kenny Toh

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130325

KEYWORDS: Photomasks, Stereolithography, Printing, Lithography, Optical lithography, Transparency, Photoresist processing, Photoresist materials, Photoresist developing, Scanning electron microscopy

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Proceedings Article | 1 June 1991 Paper

Technology and chemistry of high-temperature positive resist

Medhat Toukhy, Thomas Sarubbi, David Brzozowy

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46398

KEYWORDS: Picture Archiving and Communication System, Chemistry, Polymers, Resistance, Lithography, Manufacturing, Image resolution, Hydrogen, Scanning electron microscopy, Absorption

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Proceedings Article | 1 June 1991 Paper

Reliability of contrast and dissolution-rate-derived parameters as predictors of photoresist performance

Peggy Spragg, Rodney Hurditch, Medhat Toukhy, John Helbert, Sandeep Malhotra

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46379

KEYWORDS: Absorbance, Picture Archiving and Communication System, Lithography, Photoresist materials, Semiconducting wafers, Scanning electron microscopy, Photoresist processing, Reliability, Computer simulations, Image resolution

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The definition and use of contrast in photolithography has been adapted from the science and technology of photographic imaging media. Thus, a high contrast resists/process should allow useful high resolution images to be delineated even from a low contrast optical system (ie. one with low MTF) and hence provide improved resolution for diffracted limited imaging. Furthermore, it has been widely recognized and clearly documented, for example in ASTM F1059-87 that: 'The contrast value is a measure of process latitude of the photoresist'. Despite these assertions, there is a large body of evidence which suggests that contrast may not be a quantitative predictor of either resolution or process latitude, and in several cases opposite trends are reported. The authors of this paper set out to explore the utility of reliability of photoresist contrast (which we will refer to as 'gamma') as a predictor or resist performance including image profile, linearity and critical dimension control, both as a function of process variables such as film thickness, bake and develop conditions and as a function of resist composition. The influence of the precision of experimental measurements on the reliability of gamma determination is investigated. The recently reported variation of gamma with film thickness, which exhibits both a 'swing' and 'bulk' effect is confirmed. Experimental and computer simulation results show a 180 degree(s) out of phase relationship with Eo and an almost linear decrease in gamma (measured at Emax or Emin) with increase in film thickness, which is consistent with published theory. However, the phase relationship may be perturbed for conditions in which gamma is a strong function of process variables such as develop time and post exposure bake. It is shown that gamma correlates reasonably well with resist profile but less so with critical dimension, especially when comparing resists with varying optical absorption properties, or systems which exhibit high surface inhibition. Many correlation may only be meaningful it gamma measurements are carried out with control in resist film thickness to within the same limits necessary for reproducible lithography. Computer simulation is used as an aid to gain further insight into the relationship between gamma and the slope Tan (phi) of the steepest portion of the log (dissolution rate) vs. log (dose) curve. It is concluded that the use of gamma and Tan (phi) in combination should provide a more reliable measure of resist/process performance.

Showing 5 of 39 publications

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