Silicon nanowires were synthesized on silicon substrate by depositing Ag and Cu particles using electroless
metal deposition (EMD) technique followed by HF/Fe(NO<sub>3</sub>)<sub>3</sub> solution based etching at room temperature.
Structural and optical characterizations were done on synthesized nanowires. Nanowires of diameter 45 nm to
200 nm having length 2 μm to 4 μm were evident from the scanning electron microscope (SEM) images with
maximum aspect ratio 100. Optical absorption study using 400 nm to 1100 nm wavelength by UV/VIS
spectrophotometer revealed that synthesized structures absorbed up to 78% of incident radiation in the
wavelength range 400 nm to 820 nm, which is much better than that of bulk silicon as they absorbed maximum
67% of the radiation. This observation supports that the material synthesized could be a potential candidate for
efficient photovoltaic solar cell and other optoelectronic devices.