Phosphor-free InGaN/AlGaN core-shell nanowire light-emitting diodes (LEDs) grown by molecular beam epitaxy have been developed and their application in visible light communication (VLC) has been investigated. The electroluminescence spectra of these nanowire LEDs show a very broad spectral linewidth and fully covers the entire visible spectrum. High-brightness phosphor-free LEDs with highly stable white-light emission and high color-rendering index (CRI) of >98 were obtained by controlling the Indium composition in the device active region. Moreover, the phosphor-free nanowire white-LEDs exhibit relatively high 3-dB frequency bandwidth of ~ 1.4 MHz which is higher compared to that of phosphor-based white LEDs at the same measurement condition. Such high-performance phosphorfree nanowire LEDs are being further improved and are ideally suited for future smart lighting applications and communications.
We report on the achievement of relatively high power phosphor-free white light-emitting diodes (LEDs) using a new self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire heterostructure. Multiple AlGaN shell layers are spontaneously formed during the growth of the quantum dot active region. Due to the drastically reduced nonradiative surface recombination, such core-shell nanowire structures exhibit significantly increased carrier lifetime (from ~ 0.3ns to ~ 4.5ns) and massively enhanced photoluminescence intensity. Strong white-light emission was recorded for the unpackaged core-shell nanowire LEDs with an output power of >5 mW, measured under an injection current ~ 60A/cm<sup>2</sup>, with a color rendering index of ~ 95.
One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ~57%) at room-temperature.