Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure
Metal oxide nanoparticle resists have recently emerged as next generation photoresist materials which exhibit promising performance for extreme ultraviolet lithography. In this present work, we are able to show our ability to synthesize and well characterize small uniform metal oxide nanoparticles, to present stability study of the nanoparticles in the resist solvent over time, to pattern ~20 nm features by electron beam lithography, and to provide an insight into the insolubilization mechanism of the resist system.