Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by
modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO2 was about -4%/K at room
temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO2 films
had a single  orientation of VO2(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline
Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping,
the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and
decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR
detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.
It is investigated the optical transmission properties of the Bragg microcavity sandwiched between Bragg reflectors which are composed of alternately arranged different dielectrics with positive and negative
refractive indices. The defect layer thickness, incident angle of incident wave, quasi-periodicity of the Bragg reflectors and dispersion of the negative-refractive-index dielectric all have influence on the transmission spectra. Comparison of optical bistable characteristics is presented for the following three nonlinear Bragg
microcavities. The first has Bragg reflectors with periodic structure containing non-dispersive negative-refractive-index dielectric; the second has the same structure as the first, however, the negative-refractive index dielectric is dispersive; the third also has periodic structure, however, where the Bragg reflectors are composed of alternately arranged dielectrics with different positive- refractive-indices. It is analyzed influence of the incident angle on the bistability of the nonlinear Bragg microcavity containing
We study the optical bistable properties in one-dimensional photonic crystal with symmetric structure (AB)N(D)M(BA)N, where A is high refractive index medium, B is low refractive index medium, D is defect layer, N is the number of layer periods at the left and right of the defect layer. M determines the thickness of the defect layer with Kerr medium. First, we analyze mechanisms producing bistability by the structure consisted of a nonlinear layer sandwiched between Bragg reflectors. Then by using the transfer matrix method, we calculate numerically the threshold value of the bistability switching in one-dimensional photonic crystals with structure (AB)N(D)M(BA)N. The investigations show that the number of layer periods (N) and the thickness of the defect layer (M) influence the threshold value of the bistability switching. We confirm the parameter of the bistability switching to produce the lower threshold value.
On the basis of the investigation into organic thin films preparations and device, the Organic Light-Emitting Device (OLED) with mutual doped transitional layer was designed and fabricated, mutual doped layer of N,N’-bis-(1-naphthyl)-N,N’-diphenyl-1, 1’-biphenyl-4,4’-diamine (NPB) and aluminum tri(8-hydroxyquinoline)(Alq3) was used as emitting layer. Rate of NPB to Alq3 was 10:1 at anode to 1:10 at cathode. Light-emitting performance of the OLED was analyzed. Compared with conventional device in which Alq3 was used as emitting layer and blending device in which blending layer of NPB and Alq3 was used as emitting layer, the device performance of mutual doped transitional layer was evidently improved because of the interface and the waveguide effect were eliminated effectively.