The metal-insulator-metal (MIM) diodes are considered to be very attractive candidate for infrared energy harvesting and detection applications. The high speed and compatibility with integrated circuits (IC’s) makes MIM diodes good choice for infrared (IR) regime of the electromagnetic spectrum. Moreover, it is possible to obtain large volume of devices in same unit area due to smaller active area required for MIM diodes. The aim of this work is to design and develop MIM diodes for energy harvesting and IR detection. For this work three different sets of materials; Au-Al<sub>2</sub>O<sub>3</sub>-Al, Au-Cr<sub>2</sub>O<sub>3</sub>-Cr, Au-TiO2-Ti Al<sub>2</sub>O<sub>3</sub>, are used for fabricating MIM diodes. Furthermore, the effect of the insulator thickness and diode active areas are investigated for Au-Al<sub>2</sub>O<sub>3</sub>-Al MIM diode to study diode characteristics further. The optimization of fabrication processes in physical vapor deposition (PVD) systems for the MIM diodes resulted in the devices having high non-linearity and responsivity. The non-linearity of 80 μA/V<sup>2</sup> and a responsivity of 15 A/W are achieved for Al-Al<sub>2</sub>O<sub>3</sub>-Au MIM diodes under low applied bias of 50 mV. The responsivity of Au-Cr<sub>2</sub>O<sub>3</sub>-Cr and Au-TiO<sub>2</sub>-Ti diodes with insulating layers of Cr<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> are found to be 8 A/W and 2 A/W respectively.
Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.
There is increasing demand for devices operating at room temperature for IR sensing and imaging. Antenna coupled metal-insulator-metal (MIM) diodes are potential candidates in this field. The reasons are miniaturizing features and femtosecond operation of these devices: smaller sizes lead to more pixels in limited areas and quantum tunneling phenomenon leads to faster operation. In this work, it is aimed to design and develop a device that can act as IR detector at room temperature.