We investigate α-(AlxGa1-x)2O3 layers deposited by PLD for 0≤x≤1 on a- and m-plane sapphire. RSM measurements reveal a fundamental difference for these planes. Pseudomorphic α-(AlxGa1-x)2O3 on m-plane sapphire shows a shear strain e'5 along the c-axis vanishing on a-plane sapphire. Similarly, only relaxed m-plane α-(AlxGa1-x)2O3 exhibits a global lattice tilt in c-axis direction. Modeling of lattice constants and e'5 as function of x prove the shear strain to be due to the non-vanishing C14 component of the stress-strain tensor for α-(AlxGa1-x)2O3 contributing only for the m-plane. We further explain the occurrence of the lattice tilt and identify possible relaxation mechanisms.
We present κ-Ga2O3 layers grown by tin-assisted PLD on highly conductive Al-doped ZnO back contact layers. κ-Ga2O3 deposited on c-sapphire typically exhibits no lateral current flow. Significant currents can only be detected when a vertical current flow through the κ-Ga2O3 layer is enabled by the back contact confirming a strong conductivity anisotropy possibly due to suppressed transport across rotational domain boundaries. Pt/PtOx or Pd/PdOx Schottky contacts and NiO or ZnCo2O4 p-type contacts exhibit rectification ratios up to seven orders of magnitude. Further, we obtain a mean barrier height of ~2.1 eV and ideality factors as low as ~1.3 for Pt/PtOx/κ-Ga2O3 Schottky barrier diodes.
The temperature dependence of diffusion length and lifetime or diffusivity of the free exciton is measured in a
commercial ZnO-substrate and in an epitaxial ZnO quantum well using nm-spatially and ps-time resolved
cathodoluminescence (CL) spectroscopy. The characteristic temperature dependence of the exciton mobility is a
fingerprint of the underlying excitonic scattering processes. Since excitons are neutral particles scattering at ionized
impurities should be not effective. With decreasing temperature diffusion lengths and lifetimes give rise to a monotonous
increase of the excitonic mobility. Two different methods for determining the excitonic transport parameters will be
presented. On the one hand we are able to perform completely pulsed excitation experiments and on the other hand a
combination of cw- and pulsed excitation in two independent measurements are needed.
Homoepitaxial ZnO thin films doped with phosphorus (0.01% to 1% P) and/or alloyed with magnesium (1% to 4% Mg) show pseudomorphic growth with compressive or tensile strain in dependence on the dopant concentration. The structural quality of the used O-face ZnO(001) substrates was inspected by the rocking curves of the symmetric (002) and the skew-symmetric (101) peaks. Preselection of the substrate batches by the supplier decreased the twist dislocation density and increased the structural homogeneity within the batches considerably. TEM cross sections show increasing density of c-plane defects with increasing phosphorus concentration in the films. ZnO(002) rocking curves of MgZnO:P films on ZnO were as narrow as 27 arcsec with a FWHM of the substrate peak of 23 arcsec. The in-plane lattice match was confirmed for all dopant concentrations by HR-XRD triple axis scans of the (002) and (101) peaks. The results show the balance between tensile strain induced by Mg and compressive strain by P in ZnO. Two-dimensional growth with terrace-like surface structure is most prominent for the Mg-alloyed films without P. High electron mobilities up to 190 cm2/Vs at 300K and up to 800 cm2/Vs at 70 K were found in the homoepitaxial MgZnO:P thin films.
We have investigated the morphology, crystalline quality, the transport and electronic properties of homoepitaxial ZnO
and ZnO:P thin films grown by pulsed-laser deposition. Atomic surface steps are visible for growth temperatures of
650°C and higher. The unit cell volume of undoped thin films is smaller than that of the hydrothermal substrates.
Phosphorous doping increases the unit cell volume such that a perfect lattice match is achieved for a nominal
phosphorous content of 0.01 wt.%. Undoped thin films have a net doping concentration below 1015 cm-3, whereas the
phosphorous doping increases the free electron concentration at room temperature to 1017 cm-3 and above. Temperature
dependent Hall effect measurements show that interstitial zinc with a thermal activation energy of 34 meV is a dominant
donor in homoepitaxial ZnO:P thin films. The Hall mobility of such samples is similar to ZnO single crystals grown by
seeded chemical vapor transport. Low temperature photoluminescence measurements reveal recombination of free
excitons and excitons bound to interstitial zinc and excitons bound to neutral and ionized aluminum donors. Defect
related deep luminescence is not observed for undoped homoepitaxial thin films. In contrast phosphorous doping
introduces two broad recombination bands centered at 2.9 eV and 1.9 eV.
Phosphorous-doped ZnO (ZnO:P) nanowires were prepared by a high-pressure pulsed laser deposition process. To
extend the size range of available wires, μm-thick ZnO:P microwires were grown additionally by a direct carbothermal
deposition process. Low-temperature cathodoluminescence of single ZnO:P nanowires grown by both processes exhibit
characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission ((A0, X), 3.356 eV), free-electron
to neutral-acceptor emission ((e, A0), 3.314 eV), and donor-to-acceptor pair emission (DAP, ~3.24 and ~3.04
eV). This proves that stable phosphorus acceptor levels have been induced into the ZnO:P nano- and microwires. From
the quantitative evaluation of the spectroscopic features we deduct an acceptor binding energy of 122 meV. The ZnO:P
microwires were used as channels in bottom-gate field effect transistors (FET) built on Si substrates with SiO2 gate
oxide. The electrical FET-characteristics of several wires show reproducibly clear qualitative indication for p-type
conductivity for variation of gate voltage. This behavior is opposite to that of nominally undoped, n-type conducting
wires investigated for comparison. The p-type conductivity was found to be stable over more than six months.
Strong polarization coupling is expected by combining ferroelectric materials with switchable polarization and wurtzite
layers exhibiting a permanent spontaneous polarization. To demonstrate these charge coupling effects, current-voltage,
conductivity-frequency and capacitance-frequency (admittance) characteristics have been measured on epitaxial
heterostructures grown of ferroelectric BaTiO3 (001) films on conducting SrRuO3 layers on SrTiO3 (100) substrates with
oxide SrRuOx, metallic Pt and semiconducting ZnO top electrodes. The electrical measurements show clear indications
for polarization coupling of the ferroelectric perovskite BaTiO3 and the piezoelectric wurtzite ZnO thin films.
We present numerical solutions for low order hexagonal whispering gallery modes to simulate the resonant behaviour of single zinc oxide (ZnO) nanopillars. Experimental resonance spectra of such nanocavities, determined by polarization-resolved micro-photoluminescence spectroscopy, are well described by the results of our numerics. The spectral analysis yields the particular birefringence of every investigated nanopillar, consistent with current literature values for ZnO bulk material. Hence, the whispering gallery effect has been utilized to detect optical constants of individual nanostructures.
We have investigated the material processing of oxides and fluorides using ultrashort laser pulses and have demonstrated a strong improvement when compared to results using longer pulse widths in the nanosecond range. High laser fluences (well above the damage threshold) at 800 nm and 248 nm are used to generate channels with high aspect ratios. Careful beam alignment can eliminate any remaining stress-induced damage outside the channel. At intermediate fluences just above the front surface processing threshold we observe a low ablation rate. In this 'gentle etch' phase it is possible to generate well-defined, smooth pockets and periodic patterns or ripples. The ripples appear when the laser pulse width is shorter than the lifetime of the electrons excited into the conduction band. In the low fluence regime (below the surface damage threshold) the self-focusing of laser pulses in the ps and sub-ps range can be utilized to obtain microstructures inside and on the rear side of the transparent materials.
High-Ta superconducting Bi-Sr-Ca-Cu-O films on single crystal silicon substrates were prepared by laser induced plasma deposition. The stoichiometric change of cation concentrations of sintered target material to the thin film using a Nd-YAG and an excimer laser for the deposition is compared. Laser ionization and spark source mass spectrometry (SSMS and LIMS) were applied for the trace and cluster analysis of YBa2Cu3O and Bi-Sr-Ca-Cu-O ceramics.
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