Extreme ultraviolet (EUV)-induced oxidation of silicon-capped, [Mo/Si] multilayer mirrors in the presence of background levels of water vapor is recognized as one of the most serious threats to multilayer lifetime since oxidation of the top silicon layer is an irreversible process. The current work directly compares the oxidation on a silicon-capped, [Mo/Si] multilayers caused by EUV photons with the oxidation caused by 1 keV electrons in the presence of the same water vapor environment (2 x 10<sup>-6</sup> Torr). Similar, 4 nm, silicon-capped, [Mo/Si] multilayer mirror samples were exposed to photons (95.3 eV) + water vapor at the ALS, LBNL, and also to a 1 keV electron beam + water vapor in separate experimental systems. The results of this work showed that the oxidation produced by ~1 µA of e-beam current was found to be equivalent to that produced by ~1 mW of EUV exposure. These results will help allow the use of 1 keV electrons beams, instead of EUV photons, to perform environmental testing of multilayers in a low-pressure water environment and to more accurately determine projected mirror lifetimes based on the electron beam exposures.
The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in designing the protective capping layer coatings, understanding their performance and estimating their lifetimes based on accelerated electron beam and EUV exposure studies. Our current capping layer coatings have about 40 times longer lifetimes than Si-capped multilayer optics. Nevertheless, the lifetime of current Ru-capped multilayers is too short to satisfy commercial tool requirements and further improvements are essential.
Carbon contamination removal was investigated using remote RF-O2, RF-H2, and atomic hydrogen experiments. Samples consisted of silicon wafers coated with 100 Angstrom sputtered carbon, as well as bare Si-capped Mo/Si optics. Samples were exposed to atomic hydrogen or RF plasma discharges at 100 W, 200 W, and 300 W. Carbon removal rate, optic oxidation rate, at-wavelength (13.4 nm) peak reflectance, and optic surface roughness were characterized. Data show that RF- O2 removes carbon at a rate approximately 6 times faster RF- H2 for a given discharge power. However, both cleaning techniques induce Mo/Si optic degradation through the loss of reflectivity associated with surface oxide growth for RF-O2 and an unknown mechanism with hydrogen cleaning. Atomic hydrogen cleaning shows carbon removal rates sufficient for use as an in-situ cleaning strategy for EUVoptics with less risk of optic degradation from overexposures than RF-discharge cleaning. While hydrogen cleaning (RF and atomic) of EUV optics has proven effective in carbon removal, attempts to dissociate hydrogen in co-exposures with EUV radiation have resulted in no detectable removal of carbon contamination.
The performance of Mo/Si multilayer mirrors (MLMs) used to reflect UV (EUV) radiation in an EUV + hydrocarbon (NC) vapor environment can be improved by optimizing the silicon capping layer thickness on the MLM in order to minimize the initial buildup of carbon on MLMs. Carbon buildup is undesirable since it can absorb EUV radiation and reduce MLM reflectivity. A set of Mo/Si MLMs deposited on Si wafers was fabricated such that each MLM had a different Si capping layer thickness ranging form 2 nm to 7 nm. Samples from each MLM wafer were exposed to a combination of EUV light + (HC) vapors at the Advanced Light Source (ALS) synchrotron in order to determine if the Si capping layer thickness affected the carbon buildup on the MLMs. It was found that the capping layer thickness had a major influence on this 'carbonizing' tendency, with the 3 nm layer thickness providing the best initial resistance to carbonizing and accompanying EUV reflectivity loss in the MLM. The Si capping layer thickness deposited on a typical EUV optic is 4.3 nm. Measurements of the absolute reflectivities performed on the Calibration and Standards beamline at the ALS indicated the EUV reflectivity of the 3 nm-capped MLM was actually slightly higher than that of the normal, 4 nm Si-capped sample. These results show that he use of a 3 nm capping layer represents an improvement over the 4 nm layer since the 3 nm has both a higher absolute reflectivity and better initial resistance to carbon buildup. The results also support the general concept of minimizing the electric field intensity at the MLM surface to minimize photoelectron production and, correspondingly, carbon buildup in a EUV + HC vapor environment.
Carbon deposition and removal experiments on Mo/Si multilayer mirror (MLM) samples were performed using extreme ultraviolet (EUV) light on Beamline 220.127.116.11 of the Advanced Light Source, Lawrence Berkeley National Laboratory (LBNL). Carbon (C) was deposited onto Mo/Si multilayer mirror (MLM) samples when hydrocarbon vapors where intentionally introduced into the MLM test chamber in the presence of EUV at 13.44 nm (92.3eV). The carbon deposits so formed were removed by molecular oxygen + EUV. The MLM reflectivities and photoemission were measured in-situ during these carbon deposition and cleaning procedures. Auger Electron Spectroscopy (AES) sputter-through profiling of the samples was performed after experimental runs to help determine C layer thickness and the near-surface compositional-depth profiles of all samples studied. EUV powers were varied from ~0.2mW/mm<SUP>2</SUP> to 3mW/mm<SUP>2</SUP>(at 13.44 nm) during both deposition and cleaning experiments and the oxygen pressure ranged from ~5x10<SUP>-5</SUP> to 5x10<SUP>-4</SUP> Torr during the cleaning experiments. C deposition rates as high as ~8nm/hr were observed, while cleaning rates as high as ~5nm/hr could be achieved when the highest oxygen pressure were used. A limited set of experiments involving intentional oxygen-only exposure of the MLM samples showed that slow oxidation of the MLM surface could occur.
The first environmental data from the Engineering Test Stand (ETS) has been collected. Excellent control of high-mass hydrocarbons has been observed. This control is a result of extensive outgas testing of components and materials, vacuum compatible design of the ETS, careful cleaning of parts and pre-baking of cables and sub assemblies where possible, and clean assembly procedures. As a result of the hydrocarbon control, the residual ETS vacuum environment is rich in water vapor. Analysis of witness plate data indicates that the ETS environment does not pose a contamination risk to the optics in the absence of EUV irradiation. However, with EUV exposure, the water rich environment can lead to EUV- induced water oxidation of the Si-terminated Mo/Si optics. Added ethanol can prevent optic oxidation, allowing carbon growth via EUV cracking of low-level residual hydrocarbons to occur. The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable.
Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and Mo/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on Mo/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%.
The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzschild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.
Laser plasma sources convert 1 - 2% of the incident laser energy into soft x rays that can be used in multilayer-based reflective systems. These sources are useful in the laboratory for development of soft-x-ray projection lithography (SXPL). In the commercialization of SXPL technology, the laser plasma source offers the advantages of modularity and lower cost, when compared to the alternative synchrotron source. The characteristics of the source define requirements for other system components. The condensing system, which collects radiation from the plasma source and directs it onto the mask, must be designed to match the source size and the aperture of the imaging objective. The first surface of the condenser is subject to damage by unwanted debris from the plasma source. This paper discusses several of the major issues involved in using laser plasma sources in SXPL experiments and provides examples of experimental solutions. Simulated and actual soft-x-ray images are shown.