Dr. Michael Oehme Profile

Dr. Michael Oehme

at Univ. Stuttgart

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Author

Publications (8)

Proceedings Article | 5 March 2022 Open Access

Modeling and design of an electrically pumped SiGeSn microring laser

B. Marzban, L. Seidel, V. Kiyek, T. Liu, M. Zöllner, Z. Ikonic, G. Capellini, D. Buca, J. Schulze, M. Oehme, J. Witzens

Proceedings Volume 12006, 120060K (2022) https://doi.org/10.1117/12.2609537

KEYWORDS: Microrings, Electroluminescence, Absorption, Scanning electron microscopy, Resistance, Germanium, Diodes, Semiconductors, Semiconductor lasers

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Proceedings Article | 21 May 2018 Paper

SiGeSn material for integrated optical devices

M. Oehme, D. Schwarz, C. Clausen, I. Fischer, J. Schulze

Proceedings Volume 10686, 106860C (2018) https://doi.org/10.1117/12.2318011

KEYWORDS: Germanium, Tin, Silicon, Photodetectors, Diodes, Doping, Integrated optics, Heterojunctions, Optical components, Annealing

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Proceedings Article | 20 February 2017 Presentation + Paper

Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)

Bernhard Schwartz, Michael Oehme, Roman Koerner, Stefan Bechler, Jörg Schulze, Martin Kittler

Proceedings Volume 10108, 101080D (2017) https://doi.org/10.1117/12.2249564

KEYWORDS: Germanium, Light emitting diodes, Silicon, Electroluminescence, Luminescence, Silicon photonics, Photonics, Diodes, Tin, Molecular beam epitaxy, Doping

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Proceedings Article | 27 February 2015 Paper

Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers

B. Schwartz, T. Arguirov, M. Kittler, M. Oehme, K. Kostecki, E. Kasper, J. Schulze

Proceedings Volume 9367, 93671H (2015) https://doi.org/10.1117/12.2080816

KEYWORDS: Light emitting diodes, Electroluminescence, Germanium, Doping, Silicon, Antimony, Quantum wells, Tin, Luminescence, Quantum dot light emitting diodes

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Proceedings Article | 22 May 2013 Paper

Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures

M. Schmid, M. Kaschel, M. Gollhofer, M. Oehme, J. Werner, K. Ulbricht, E. Kasper, J. Schulze

Proceedings Volume 8767, 87670C (2013) https://doi.org/10.1117/12.2017168

KEYWORDS: Absorption, Diodes, Modulation, Silicon, Photons, PIN photodiodes, Modulators, Annealing, Germanium, Molecular beam epitaxy

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Proceedings Article | 22 May 2013 Paper

Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors

Mathias Kaschel, Marc Schmid, Martin Gollhofer, Michael Oehme, Erich Kasper, Jörg Schulze

Proceedings Volume 8767, 87670D (2013) https://doi.org/10.1117/12.2017008

KEYWORDS: Sensors, Doping, Germanium, Photodetectors, Silicon, Resistance, Heterojunctions, Capacitance, Modulators, Optical testing

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Proceedings Article | 6 March 2013 Paper

Light from germanium tin heterostructures on silicon

E. Kasper, M. Kittler, M. Oehme, T. Arguirov

Proceedings Volume 8628, 86280J (2013) https://doi.org/10.1117/12.2006594

KEYWORDS: Tin, Germanium, Silicon, Semiconductors, Electroluminescence, Light emitting diodes, Absorption, Luminescence, Heterojunctions, Annealing

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Proceedings Article | 2 June 2005 Paper

Spectroscopical analyis of strained silicon quantum wells

J. McCarthy, E. Ni Mhuircheartaigh, K. Lyutovich, M. Oehme, T. Perova, R. Moore, W. Blau

Proceedings Volume 5824, (2005) https://doi.org/10.1117/12.606601

KEYWORDS: Silicon, Quantum wells, Germanium, Transmission electron microscopy, Raman spectroscopy, Spectroscopy, Micro raman spectroscopy, Interfaces, Statistical analysis, Raman scattering

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Showing 5 of 8 publications

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