Mr. Michael Reilly Profile

Michael Reilly

Principal Engineer Photolithography at Rohm and Haas Electronic Materials, LLC

SPIE Involvement:

Author

Publications (40)

Proceedings Article | 29 March 2013 Paper

Combining physical resist modeling and self-consistent field theory for pattern simulation in directed self-assembly

Michael Reilly, Valeriy Ginzburg, Mark Smith

Proceedings Volume 8682, 86820G (2013) https://doi.org/10.1117/12.2011639

KEYWORDS: Polymers, Lithography, Computer simulations, Polymethylmethacrylate, Photoresist materials, Semiconducting wafers, Photoresist processing, Chemical analysis, Wafer-level optics, Directed self assembly

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Proceedings Article | 20 March 2012 Paper

Evolution of negative tone development photoresists for ArF lithography

Thomas Cardolaccia, Young Seok Kim, Jong Keun Park, Cecily Andes, Michael Reilly

Proceedings Volume 8325, 832507 (2012) https://doi.org/10.1117/12.916633

KEYWORDS: Photoresist developing, Photoresist materials, Chemistry, Lithography, Photomasks, Line width roughness, Polymers, Printing, Semiconducting wafers, Critical dimension metrology

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Proceedings Article | 16 April 2011 Paper

Method of ellipsometric characterization of the resist and DBARC interface

Adam Ware, Sabrina Wong, James Cameron, Michael Reilly

Proceedings Volume 7972, 79722O (2011) https://doi.org/10.1117/12.880982

KEYWORDS: Image processing, Interfaces, Reflection, Photoresist processing, Data modeling, Silicon, Scanning electron microscopy, Polymers, Semiconducting wafers, Ions

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Proceedings Article | 16 April 2011 Paper

Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Dario Goldfarb, Larry Zhuang, Jason Meiring, Michael Reilly, Karen Petrillo, Sean Burns, Martin Burkhardt, Guillaume Landie, Yongan Xu, Matthew Colburn, Kenji Yoshimoto, Cecily Andes, Anthony Scaduto, Young Bae, Vaishali Vohra, Martin Glodde, Jason Desisto

Proceedings Volume 7972, 797206 (2011) https://doi.org/10.1117/12.882843

KEYWORDS: Photoresist developing, Photoresist materials, Polymers, Systems modeling, Semiconducting wafers, Optical lithography, Optical proximity correction, Photomasks, Etching, Nanoimprint lithography

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Proceedings Article | 16 April 2011 Paper

Negative tone development: gaining insight through physical simulation

John Biafore, Michael Reilly, Mark Smith, Young Bae, Stewart Robertson

Proceedings Volume 7972, 79720Y (2011) https://doi.org/10.1117/12.879506

KEYWORDS: Image processing, Systems modeling, Data modeling, Photoresist processing, Neodymium, Image quality, Photoresist developing, Photoresist materials, Lithography, Polymers

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Proceedings Article | 16 April 2011 Paper

Physical modeling of developable BARC at KrF

John Biafore, Michael Reilly, James Cameron, Stewart Robertson

Proceedings Volume 7972, 79720Z (2011) https://doi.org/10.1117/12.880980

KEYWORDS: Data modeling, Polymers, Lithography, Interfaces, Photoresist developing, Semiconducting wafers, Absorption, Diffusion, Neodymium, Photoresist materials

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SPIE Journal Paper | 1 October 2010

Stochastic simulation of resist linewidth roughness and critical dimension uniformity for optical lithography

Stewart Robertson, John Biafore, Mark Smith, Michael Reilly, Jerome Wandell

JM3, Vol. 9, Issue 04, 041212, (October 2010) https://doi.org/10.1117/12.10.1117/1.3517090

KEYWORDS: Stochastic processes, Critical dimension metrology, Line width roughness, Data modeling, Calibration, Computer simulations, Scanning electron microscopy, Lithography, Photons, Molecules

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Proceedings Article | 26 March 2010 Paper

Evolution of thermal cure resist for double patterning applications

Matthew Colburn, Michael Reilly, Vaishali Vohra, Young Bae, Chiew-Seng Koay

Proceedings Volume 7639, 76392W (2010) https://doi.org/10.1117/12.846748

KEYWORDS: Double patterning technology, Lithography, Photoresist processing, Semiconducting wafers, Electroluminescence, Astatine, Semiconductors, Image processing, Etching, Polymers

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Proceedings Article | 26 March 2010 Paper

Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model

Stewart Robertson, John Biafore, Jerome Wandell, Mark Smith, Michael Reilly

Proceedings Volume 7639, 763934 (2010) https://doi.org/10.1117/12.846539

KEYWORDS: Stochastic processes, Calibration, Data modeling, Line width roughness, Lithography, Monte Carlo methods, Semiconducting wafers, Scanning electron microscopy, Photoresist materials, 3D modeling

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Proceedings Article | 10 March 2010 Paper

The impact of optical non-idealities in litho-litho-etch processing

John Biafore, Stewart Robertson, Trey Graves, Michael Reilly, Mark Smith

Proceedings Volume 7640, 76400G (2010) https://doi.org/10.1117/12.846553

KEYWORDS: Refractive index, Photoresist processing, Coating, Optical properties, Photoresist materials, Refraction, Semiconducting wafers, Scattering, Double patterning technology, Interfaces

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Proceedings Article | 12 December 2009 Paper

Validation of the predictive power of a calibrated physical stochastic resist model

Stewart Robertson, Michael Reilly, Jerome Wandell, John Biafore, Mark Smith

Proceedings Volume 7520, 75201N (2009) https://doi.org/10.1117/12.836901

KEYWORDS: Stochastic processes, Calibration, Data modeling, Lithography, Line width roughness, Semiconducting wafers, Monte Carlo methods, Scanning electron microscopy, Finite element methods, Photoresist materials

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Proceedings Article | 11 December 2009 Paper

Advanced patterning solutions based on double exposure: double patterning and beyond

Lori Joesten, Young Bae, Michael Reilly, Rosemary Bell, Yi Liu, Amandine Pikon, George Barclay, Ken Spizuoco, Peter Trefonas, Sheri Ablaza, Thomas Cardolaccia

Proceedings Volume 7520, 75201G (2009) https://doi.org/10.1117/12.840461

KEYWORDS: Double patterning technology, Optical lithography, Photoresist processing, Image processing, Lithography, Semiconducting wafers, Chemical reactions, Coating, Control systems, Liquids

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The CD control of the first lithography (L1) patterns is a important issue in the single-etch double patterning (SEDP) process. In this process, L1 patterns are cured either chemically or thermally and then subjected to the second lithography (L2). A chemical curing process using a surface curing agent (SCA) often results in the CD growth due to the "positive" interaction between the first and second resists. A thermal curing process using a thermal cure resist (TCR) often results in the CD loss due to the volumetric shrinkage of the L1 patterns during the L2 process. By combining SCA and TCR concepts, we developed a simple "hybrid" curing system which offers precise control of the L1 CD after double patterning. This hybrid curing system involves thermal curing followed by a liquid rinse process using a double patterning primer (DPP). DPP is an aqueous solution formulated with SCA components and enhances "positive" interaction between L1 and L2 patterns. While CD loss of 5~6nm is observed without DPP treatment, ~11nm CD growth was observed with TCR after DPP treatment. The L1 CD after double patterning was precisely controllable by post-priming bake process with the rate of -0.3nm/°C in the temperature ranging from 120 ~ 150°C. Taking advantage of the CD growth with DPP treatment, we further developed three different advanced patterning schemes: 1. "Shrink Process Assisted by Double Exposure" (SPADE I), 2. "Space Patterning Assisted by Double Exposure" (SPADE II), and 3. "Sidewall Patterning Assisted by Double Exposure" (SPADE III). Using SPADE I, contact hole CD was reduced by 10~30nm and excellent through pitch performance was observed. SPADE I can also improve LER/LWR when used in the formation of smaller trenches. SPADE II was developed for self-aligned pitch splitting of contact holes and SPADE III was developed for self-aligned pitch splitting of lines. In this paper, the use of DPP in various SPADE technologies is described and its potential in the advanced patterning schemes is discussed.

Proceedings Article | 1 April 2009 Paper

Simulation of optical lithography in the presence of topography and spin-coated films

Mark Smith, Vladimir Ivin, John Biafore, Sergey Potashov, Nikolay Elistratov, Trey Graves, Damien Perret, Michael Reilly, Mikhail Silakov, Stewart Robertson

Proceedings Volume 7273, 727340 (2009) https://doi.org/10.1117/12.813557

KEYWORDS: Semiconducting wafers, Coating, Silicon, Photoresist materials, Lithography, Scanning electron microscopy, Etching, Optical lithography, Reflectivity, Natural surfaces

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Proceedings Article | 1 April 2009 Paper

Materials for single-etch double patterning process: surface curing agent and thermal cure resist

Ken Spizuoco, Young Bae, Julia Simon, Thomas Cardolaccia, Michael Reilly, Stéphanie Gaurigan, Peter Trefonas, Amandine Pikon, Gary Zhang, George Barclay, John McDermott, Yi Liu, Lori Joesten

Proceedings Volume 7273, 727306 (2009) https://doi.org/10.1117/12.814274

KEYWORDS: Double patterning technology, Photoresist processing, Image processing, Semiconducting wafers, Lithography, Photoresist materials, Cadmium, Metrology, Electron beam lithography, Coating

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Proceedings Article | 4 December 2008 Paper

BARC technology for 1.35 NA lithography

Gary Guohong Zhang, Michael Reilly, Ken Spizuoco

Proceedings Volume 7140, 71402U (2008) https://doi.org/10.1117/12.804729

KEYWORDS: Reflectivity, Reflection, Semiconducting wafers, Line edge roughness, Electron beam lithography, Lithography, Refractive index, Critical dimension metrology, Scanning electron microscopy, Diffraction

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Proceedings Article | 15 April 2008 Paper

Reflection control for line features of multiple pitches at hyper NA

Nick Pugliano, Stewart Robertson, Warren Montgomery, Michael Reilly, Michael Wagner

Proceedings Volume 6923, 69233X (2008) https://doi.org/10.1117/12.772909

KEYWORDS: Reflectivity, Reflection, Diffraction, Polarization, Calibration, Photomasks, Light, Refractive index, Image acquisition, Photoresist processing

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Proceedings Article | 28 May 2004 Paper

Advances in vortex via fabrication

George Barclay, Takeaki Ebihara, Carolyne Stafford, Vaishali Vorha, Naoya Hayashi, Yasutaka Morikawa, Marc Levenson, Michael Reilly, Martin Mastovich

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535652

KEYWORDS: Photomasks, Cadmium sulfide, Semiconducting wafers, Spiral phase plates, Critical dimension metrology, Optical vortices, Distortion, Optical lithography, Phase shifts, Scanning electron microscopy

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Proceedings Article | 26 June 2003 Paper

Aberration's impact on subresolution contact hole process windows in ultrathin imaging resist

Jo Finders, Mircea Dusa, Michael Reilly

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485505

KEYWORDS: Monochromatic aberrations, Imaging systems, Photoresist processing, Lithography, Polymers, Image quality, Diffraction, Thin films, Electroluminescence, Deep ultraviolet

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Proceedings Article | 12 June 2003 Paper

Negative tone 193-nm photoresists

Matt King, Patrick Bolton, Doris Kang, George Barclay, Michael Reilly, William Lawrence, Nick Pugliano, Tony Barbieri

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485075

KEYWORDS: Photoresist materials, Polymers, Etching, Photomasks, Optical lithography, Lithography, Photoresist developing, Switching, Critical dimension metrology, Line edge roughness

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Proceedings Article | 30 July 2002 Paper

Maximizing common process latitude by integrated process development for 130-nm lithography

Colin Parker, Todd Hiar, Michael Reilly, Frank Fischer

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474626

KEYWORDS: Photomasks, Nanoimprint lithography, Lithography, Photoresist processing, Optical proximity correction, Manufacturing, Visualization, SRAF, Scattering, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Effect of scattering bar assist features in 193-nm lithography

Lori Joesten, Jason DeSisto, Christiane Jehoul, Michael Reilly

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474636

KEYWORDS: Scattering, Printing, 193nm lithography, Lithographic illumination, Optical proximity correction, Single sideband modulation, Lithography, Reticles, Photomasks, Scanners

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Proceedings Article | 24 July 2002 Paper

Impact of isofocal bias on MEEF management

Michael Reilly, Colin Parker

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474175

KEYWORDS: Optical proximity correction, Deep ultraviolet, Nanoimprint lithography, Computer simulations, Reticles, Binary data, Silicon, Finite element methods

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Proceedings Article | 11 March 2002 Paper

Verification of the effect of mask bias on the mask error enhancement factor of contact holes

Susan MacDonald, Craig West, Michael Reilly, Mircea Dusa, Colin Parker, Doris Kang, Stewart Robertson

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.443111

KEYWORDS: Photomasks, Binary data, Scanning electron microscopy, Optical testing, Nanoimprint lithography, Image quality, Phase shifts, Image enhancement, Metrology, Semiconducting wafers

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Proceedings Article | 14 September 2001 Paper

Effects of mask bias on the mask error enhancement factor (MEEF) of contact holes

Doris Kang, Edward Pavelchek, Stewart Robertson, Michael Reilly

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435786

KEYWORDS: Photomasks, Binary data, Nanoimprint lithography, Critical dimension metrology, Photoresist materials, Deep ultraviolet, Argon, Chromium, Lithography, Reticles

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Proceedings Article | 14 September 2001 Paper

Process latitude comparison of advanced DUV photoresists to latest-generation 193-nm photoresists

Colin Parker, Christiane Jehoul, Michael Reilly, Lori Joesten, Frank Linskens

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435794

KEYWORDS: Deep ultraviolet, Nanoimprint lithography, Photoresist processing, Scanners, Photoresist materials, Resolution enhancement technologies, Image processing, Photomasks, Optical proximity correction, Critical dimension metrology

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Proceedings Article | 26 April 2001 Paper

Novel analysis technique for examining the effect of exposure conditions on the mask error enhancement factor

Colin Parker, Michael Reilly, Stewart Robertson

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425201

KEYWORDS: Photomasks, Critical dimension metrology, Ultraviolet radiation, Error analysis, Finite element methods, Reticles, Binary data, Photoresist developing, Visualization, Inspection

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Proceedings Article | 26 April 2001 Paper

MEEF management and the effect of assist feature optical proximity corrections

Colin Parker, Michael Reilly, Stewart Robertson

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425205

KEYWORDS: Photomasks, Optical proximity correction, Scattering, Lithography, Lithographic illumination, Image quality, Critical dimension metrology, Deep ultraviolet, Silicon, Resolution enhancement technologies

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Proceedings Article | 26 April 2001 Paper

Manufacturing considerations for MEEF minimization and process window optimization for 180-nm contact holes

Michael Reilly, Stewart Robertson, Edward Pavelchek, Doris Kang

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425204

KEYWORDS: Binary data, Photomasks, Picosecond phenomena, Electroluminescence, Manufacturing, Autoregressive models, Argon, Phase shifting, Reticles, Thermal modeling

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Proceedings Article | 18 August 2000 Paper

MEEF measurement and model verification for 0.3-k1 lithography

Colin Parker, Michael Reilly

Proceedings Volume 4181, (2000) https://doi.org/10.1117/12.395749

KEYWORDS: Lithography, Photomasks, Semiconductors

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Proceedings Article | 5 July 2000 Paper

Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks

Karen Kvam, Colin Parker, Robert Socha, Michael Reilly, Mircea Dusa

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388959

KEYWORDS: Optical proximity correction, Photomasks, Scattering, Binary data, Deep ultraviolet, Manufacturing, Resolution enhancement technologies, Reticles, Lithography, Electroluminescence

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Proceedings Article | 5 July 2000 Paper

Factors affecting pitch bias in lithography simulation

Catherine Swible-Keane, John Bohland, Michael Reilly, Edward Pavelchek, Stewart Robertson

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389067

KEYWORDS: Diffusion, Lithography, Data modeling, Photoresist processing, Lithographic illumination, Reflectivity, Optical proximity correction, Scanning electron microscopy, Inspection, Computer simulations

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Proceedings Article | 28 April 1999 Paper

Process window overlap for posts and lines and spaces: optimization by resist type, optical settings, and mask bias

Michael Reilly, Jentry Willie, Karen Kvam

Proceedings Volume 3741, (1999) https://doi.org/10.1117/12.346898

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Data modeling, Metals, Electroluminescence, Photoresist processing, Wafer-level optics, Reticles, Silicon

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Proceedings Article | 29 June 1998 Paper

Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates

Michael Reilly, Tracy Lindsay, David Mordo, Srini Sundararajan, Lori Joesten, Kenneth MacWilliams, Kathy Konjuh, Matthew Moynihan

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312354

KEYWORDS: Reflectivity, Photoresist materials, Deep ultraviolet, Nitrous oxide, Plasma treatment, Reflection, Critical dimension metrology, Oxides, Plasma, Interfaces

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Proceedings Article | 3 July 1995 Paper

X-ray mask fabrication process

Michael Reilly, Kuniaki Yamazaki, Frederick Moore, Franco Cerrina, Gregory Wells

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212774

KEYWORDS: Silicon, Semiconducting wafers, Gold, Photomasks, X-rays, Plating, Etching, X-ray lithography, Reactive ion etching, Glasses

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Proceedings Article | 13 May 1994 Paper

X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices

John Wallace, Hsin Li, Gong Chen, Eti Ganin, James Taylor, Franco Cerrina, Ramez Nachman, Michael Reilly, Eric Brodsky, Paul Anderson, Stephen Campbell, Gregory Wells, Azalia Krasnoperova

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175835

KEYWORDS: Photomasks, Semiconducting wafers, Optical alignment, X-rays, X-ray lithography, Mirrors, Coating, Beryllium, X-ray optics, Aluminum

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Proceedings Article | 13 May 1994 Paper

Interferometric investigation of x-ray mask fabrication distortions

Frederick Moore, Michael Reilly, Matthew Hansen, Roxann Engelstad

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175830

KEYWORDS: Photomasks, Semiconducting wafers, X-rays, Etching, Interferometry, Mask making, Wafer bonding, Silicon, Reactive ion etching, Nickel

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Proceedings Article | 1 May 1994 Paper

Optimum-forced current for electrical linewidth measurements of submicron features

James Taylor, Michael Reilly, Jyh-shyang Jenq

Proceedings Volume 2196, (1994) https://doi.org/10.1117/12.174150

KEYWORDS: Resistance, Doping, Bridges

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Proceedings Article | 15 September 1993 Paper

Prebake and post-exposure bake effects on the dissolution of AZ-PF

Franco Cerrina, L. Ocola, S. Turner, Michael Reilly, Azalia Krasnoperova

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154767

KEYWORDS: Semiconducting wafers, Chemically amplified resists, Polymers, Photoresist processing, Silver, Optical lithography, Silicon, Chlorine, X-ray lithography, Surface roughness

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Proceedings Article | 15 September 1993 Paper

Track oriented chemically-amplified resist processes for quarter-micron lithography

Shaowie Pan, Azalia Krasnoperova, Michael Reilly, James Taylor, Quinn Leonard

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154768

KEYWORDS: Photoresist processing, X-ray lithography, Lithography, Standards development, Photomasks, Data processing, Semiconducting wafers, Optimization (mathematics), Algorithm development, Diffusion

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Proceedings Article | 9 July 1992 Paper

Implementation of two-state alignment system into CXrL aligner (Poster Paper)

John Wallace, Michael Reilly, D. Bodoh, Paul Anderson, Guan-Jye Chen, Ramez Nachman, Franco Cerrina

Proceedings Volume 1671, (1992) https://doi.org/10.1117/12.136049

KEYWORDS: Optical alignment, Photomasks, Semiconducting wafers, Overlay metrology, Modulators, X-rays, X-ray lithography, Optical design, Modulation, Capacitance

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Showing 5 of 40 publications

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