As EUV lithography moves toward high-volume manufacturing (HVM), a key need for
the lithography materials makers is access to EUV photons and imaging.
The SEMATECH Resist Materials Development Center (RMDC) provided a solution path
by enabling the Resist and Materials companies to work together (using SUNY Polytechnic
Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) -based
exposure systems), in a consortium fashion, in order to address the need for EUV photons.
Thousands of wafers have been processed by the RMDC (leveraging the SUNY Poly
CNSE/SEMATECH MET, SUNY Poly CNSE Alpha Demo Tool (ADT) and the SEMATECH
Lawrence Berkeley MET) allowing many of the questions associated with EUV materials
development to be answered. In this regard the activities associated with the RMDC are
As the major Integrated Device Manufacturers (IDMs) have continued to purchase EUV
scanners, Materials companies must now provide scanner based test data that characterizes the
lithography materials they are producing. SUNY Poly CNSE and SEMATECH have partnered
to evolve the RMDC into “The Patterning Center of Excellence (CoE)”. The new CoE
leverages the capability of the SUNY Poly CNSE-based full field ASML 3300 EUV scanner
and combines that capability with EUV Microexposure (MET) systems resident in the
SEMATECH RMDC to create an integrated lithography model which will allow materials
companies to advance materials development in ways not previously possible.
The ASML extreme ultraviolet lithography (EUV) alpha demo tool is a 0.25NA fully functional lithography tool with a
field size of 26×33 mm<sup>2</sup>, enabling process development for sub-40-nm technology. Two exposure tools are installed at
customer facilities, and are equipped with a Sn discharge source. In this paper we present data measured at intermediate
focus of the Sn source-collector module. We also present performance data from both exposure tools, show the latest
results of resist exposures including excellent 32-nm half pitch dense staggered and aligned contact hole images, and
present the highlights of the first demonstration of an electrically functional full field device with one of the layers made
using EUVL in ASML's alpha demo tool.
The International Venture for Nanolithography (INVENT) initiative announced in mid 2005, a unique industry-university
consortium between the College of Nanoscale Science and Engineering at Albany and a group of leading edge
integrated device manufacturers, has launched an extensive R&D program on EUV lithography (EUVL). The overall
scope of the INVENT EUVL program, the status of our efforts to establish a baseline lithography process on a full-field
EUVL scanner, and our progress in evaluating EUV resist materials, in designing a custom reticle for scanner
characterization and in developing an actinic EUV mask imaging microscope, are discussed.
ASML has built and shipped to The College of Nanoscale Science and Engineering of the University at Albany (CNSE)
and IMEC two full field step-and-scan exposure tools for extreme ultraviolet lithography. These tools, known as Alpha
Demo Tools (ADT), will be used for process development and to set the foundation for the commercialization of this
technology. In this paper we will present results from the set-up and integration of both ADT systems, status of resist
and reticles for EUV, and the plans for using these tools at the two research centers. We will also present the first resist
images from one of the tools at the customer site, and demonstrate 32nm half-pitch dense lines/spaces printing as well as
32nm dense contact hole printing.
Immersion Lithography continues to get more and more attention as a possible solution for the 45nm technology node puzzle. In 2005, there has, indeed, been a lot of progress made. It has gone from a laboratory curiosity to being one of the industry's prime contenders for the lithography technology of choice for the 45nm node. Yet a lot of work remains to be done before it's fully implemented into production. Today, there are over a dozen full field immersion scanners in R&D and pilot lines all around the world. The first full field, pre-production "Alpha" version of the ASML Twinscan AT 1150i was delivered to Albany NanoTech in August, 2004. A consortium made up of AMD, IBM, Infineon, and Micron Technology began early evaluation of immersion technology and in December of 2004, the production of the world's first Power PC microprocessor using immersion lithography, processed on this tool, was announced by IBM.
This paper will present a summary of some of the work that was done on this system over the past year. It will also provide an overview of Albany NanoTech, the facility, its capabilities, and the programs in place. Its operating model, which is heavily focused on cooperative joint ventures, is described. The immersion data presented is a review of the work done by AMD, IBM, Infineon Technologies, and Micron Technology, all members of the INVENT Lithography Consortium in place at Albany NanoTech. All the data was published and presented by the authors in much more detail at the 2005 International Symposium on Immersion Lithography, in Bruges, Belgium.