Prof. Michal Bockowski
at Institute of High Pressure Physics
SPIE Involvement:
Conference Program Committee | Author
Publications (36)

Proceedings Article | 13 March 2019
Proc. SPIE. 10918, Gallium Nitride Materials and Devices XIV
KEYWORDS: Carbon, Methane, Magnesium, Iron, Crystals, Doping, Gallium nitride, Solids, Manganese, Temperature metrology

Proceedings Article | 13 March 2019
Proc. SPIE. 10918, Gallium Nitride Materials and Devices XIV
KEYWORDS: Annealing, Crystals, Nitrogen, Electronic components, Gallium nitride, Ion implantation, Transistors, Beryllium, Vapor phase epitaxy

Proceedings Article | 13 March 2019
Proc. SPIE. 10918, Gallium Nitride Materials and Devices XIV
KEYWORDS: Annealing, Luminescence, Crystals, Nitrogen, Lamps, Surface roughness, Doping, Atomic force microscopy, Gallium nitride, Ion implantation

Proceedings Article | 19 April 2018
Proc. SPIE. 10715, 2017 Radioelectronic Systems Conference
KEYWORDS: Semiconductors, Electronics, Crystals, Electronic components, Gallium nitride, Diodes, Transistors, Microwave radiation

Proceedings Article | 14 March 2018
Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII
KEYWORDS: Nanostructures, Crystals, Aluminum, Epitaxy, Gallium

Proceedings Article | 14 March 2018
Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII
KEYWORDS: Crystals, Doping, Gallium nitride, Manganese, Gallium, Temperature metrology

Showing 5 of 36 publications
Conference Committee Involvement (6)
Gallium Nitride Materials and Devices XV
1 February 2020 | San Francisco, California, United States
Gallium Nitride Materials and Devices XIV
4 February 2019 | San Francisco, California, United States
Gallium Nitride Materials and Devices XIII
29 January 2018 | San Francisco, California, United States
Gallium Nitride Materials and Devices XII
30 January 2017 | San Francisco, California, United States
Gallium Nitride Materials and Devices XI
15 February 2016 | San Francisco, California, United States
Showing 5 of 6 published special sections
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