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Furthermore, potentially useful output powers of up to 50 mW were observed from the narrow facet of the SLD, which could again be exploited via single device multiplexing to increase output power, with little to no cost to spectral bandwidth. The experimental findings were analyzed using a rate-equation based QD model considering the QD ensemble inhomogeneous broadening, the multilayer chirped active material, the spatial distribution of the QD carriers and the spectral and spatial distribution of the photons in the SLDs. The numerical simulations were able to predict the asymmetric output powers extracted from the SLD facets, mainly to due to different equivalent material losses experienced by the forward and backward fields in the weakly gain guided tapered device. Simulations were also able to predict the spectral distribution of the optical fields at the output facets.
The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (<3cm -1 ), a high internal efficiency (94%) and a low transparency current density (100A/cm2). For an AR-HR coated ridge Fabry Perot laser, we obtain a power of 230mW with M2=1.3.
An optical power of 150mW was obtained at 854nm wavelength, 20°C for AR-HR coated devices. We obtain a single spatial mode emission with M2=1.21 and a SMSR over 30dB, both at 150mW.
DFB Lasers at 852.12nm, corresponding to the D2 caesium transition, were then realised with a power of 40mW, 37°C for uncoated devices. The SMSR is over 30dB and the M2=1.33 at 40mW. Furthermore, the preliminary results of the linewidth obtained with a Fabry Perot interferometer give a value of less than 2MHz.
Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 μm, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz.
In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 μm (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).
Wavelength-stabilized tapered laser diodes in an external Talbot cavity: simulations and experiments
Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
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