Raytheon has been building silicon p-i-n (Si-PIN) detector arrays for the past twenty years for various remote sensing
instruments such as MODIS, EO-1, and Landsat now on orbit. See Figure 1. The Si-PIN technology at Raytheon has
matured in the past five years with the addition of a dedicated silicon wafer fab, improvements in hybrid technologies,
and the enhanced digital functionality of RVS custom read out integrated circuits (ROICs). This paper will discuss the
advantages that Raytheon Si-PIN arrays offer over conventional CCDs and monolithic CMOS imagers such as 100%
optical fill factor, high QE (visible - near IR), high MTF, and radiation hardness.