Dr. M. Leszczyński Profile

Dr. M. Leszczyński

Vice President at TopGaN Ltd

SPIE Involvement:

Author

Publications (47)

PROCEEDINGS ARTICLE | February 23, 2018

Distributed feedback InGaN/GaN laser diodes

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Electron beam lithography, Optical design, Etching, Laser development, Laser scattering, Reflectivity, Semiconductor lasers, Gallium nitride, Distributed feedback laser diodes, Spectroscopes

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PROCEEDINGS ARTICLE | February 23, 2018

GaN laser diodes for high-power optical integration and quantum technologies

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Waveguides, High power lasers, Laser applications, Semiconductor lasers, Gallium nitride, Diodes, Integrated optics, Waveguide lasers, Near field optics

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PROCEEDINGS ARTICLE | October 5, 2017

Tapered waveguide high power AlGaInN laser diodes and amplifiers for optical integration and quantum technologies

Proc. SPIE. 10442, Quantum Information Science and Technology III

KEYWORDS: Waveguides, High power lasers, Laser applications, Semiconductor lasers, Gallium nitride, Diodes, Quantum optics, Waveguide lasers, Gallium, Near field optics

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PROCEEDINGS ARTICLE | October 5, 2017

GaN laser diodes for quantum technologies

Proc. SPIE. 10442, Quantum Information Science and Technology III

KEYWORDS: Defense and security, Quantum clocks, Laser applications, Interferometry, Semiconductor lasers, Gallium nitride, Atomic clocks, Quantum optics, Quantum communications, Quantum computing

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PROCEEDINGS ARTICLE | May 11, 2017

AlGaInN laser diode bars for high-power, optical integration and quantum technologies

Proc. SPIE. 10238, High-Power, High-Energy, and High-Intensity Laser Technology III

KEYWORDS: Quantum wells, Imaging systems, High power lasers, Laser applications, Semiconductor lasers, Gallium nitride, Diodes, Free space optics, Integrated optics, Quantum optics, Laser systems engineering, Diode pumped solid state lasers

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PROCEEDINGS ARTICLE | February 16, 2017

AlGaInN laser-diode technology for optical clocks and atom interferometry

Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII

KEYWORDS: Quantum wells, Chemical species, Indium, Laser applications, Laser development, Interferometry, Semiconductor lasers, Gallium nitride, Optical clocks, Gallium

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PROCEEDINGS ARTICLE | October 25, 2016

Advances in AlGaInN laser diode technology for defence, security and sensing applications

Proc. SPIE. 9992, Emerging Imaging and Sensing Technologies

KEYWORDS: Defense and security, Quantum wells, Security technologies, Imaging systems, Crystals, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Gallium nitride

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PROCEEDINGS ARTICLE | October 21, 2016

High speed visible light communication using blue GaN laser diodes

Proc. SPIE. 9991, Advanced Free-Space Optical Communication Techniques and Applications II

KEYWORDS: Visible radiation, Eye, Laser development, Laser scattering, Free space, Data transmission, Semiconductor lasers, Gallium nitride, Data communications, Free space optical communications

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PROCEEDINGS ARTICLE | May 13, 2016

Advances in AlGaInN laser diode technology for defence and sensing applications

Proc. SPIE. 9834, Laser Technology for Defense and Security XII

KEYWORDS: Defense and security, Quantum wells, Lasers, Imaging systems, Laser applications, Semiconductor lasers, Gallium nitride, Free space optics, Epitaxy, Laser systems engineering

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PROCEEDINGS ARTICLE | May 13, 2016

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

Proc. SPIE. 9833, Atmospheric Propagation XIII

KEYWORDS: Defense and security, Laser applications, Data transmission, Semiconductor lasers, Gallium nitride, Telecommunications, Diodes, Free space optics, Data communications, Free space optical communications, Laser systems engineering

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PROCEEDINGS ARTICLE | April 28, 2016

AlGaInN laser diode bar and array technology for high-power and individual addressable applications

Proc. SPIE. 9892, Semiconductor Lasers and Laser Dynamics VII

KEYWORDS: Quantum wells, Continuous wave operation, High power lasers, Laser applications, Semiconductor lasers, Gallium nitride, Free space optics, Epitaxy, Laser systems engineering

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PROCEEDINGS ARTICLE | March 15, 2016

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

Proc. SPIE. 9739, Free-Space Laser Communication and Atmospheric Propagation XXVIII

KEYWORDS: Optical fibers, Laser applications, Data transmission, Optical testing, Semiconductor lasers, Gallium nitride, Telecommunications, Diodes, Fiber optic communications, Free space optical communications, Laser systems engineering, Airborne laser technology

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PROCEEDINGS ARTICLE | February 26, 2016

AlGaInN laser diode technology for systems applications

Proc. SPIE. 9748, Gallium Nitride Materials and Devices XI

KEYWORDS: Eye, Continuous wave operation, Data transmission, Epitaxy

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SPIE Journal Paper | February 10, 2016

AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

Najda, Stephen , Perlin, Piotr , Suski, Tadek , Marona, Lucja , Leszczyński, Mike , Wisniewski, Przemek , Czernecki, Robert , Kucharski, Robert , Targowski, Gregorz , Watson, Malcolm , White, Henry , Watson, Scott , Kelly, Antony

OE Vol. 55 Issue 02

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Data transmission, Fiber optic communications, Optical communications, Polymer optical fibers, Telecommunications, Gallium, Indium

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PROCEEDINGS ARTICLE | October 13, 2015

AlGaInN laser diode technology and systems for defence and security applications

Proc. SPIE. 9649, Electro-Optical Remote Sensing, Photonic Technologies, and Applications IX

KEYWORDS: Defense and security, Quantum wells, Indium, Laser applications, Data transmission, Semiconductor lasers, Gallium nitride, Telecommunications, Free space optics, Information security

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PROCEEDINGS ARTICLE | May 20, 2015

AlGaInN laser diode technology and systems for defence and security applications

Proc. SPIE. 9466, Laser Technology for Defense and Security XI

KEYWORDS: Defense and security, Quantum wells, Indium, Laser applications, Laser development, Data transmission, Semiconductor lasers, Gallium nitride, Telecommunications, Epitaxy

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PROCEEDINGS ARTICLE | May 12, 2015

AlGaInN laser diode bar and array technology for high power and individually addressable applications

Proc. SPIE. 9513, High-Power, High-Energy, and High-Intensity Laser Technology II

KEYWORDS: Quantum wells, Waveguides, High power lasers, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Free space optics, Near field optics

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PROCEEDINGS ARTICLE | March 16, 2015

AlGaInN laser diode technology for free-space telecom applications

Proc. SPIE. 9354, Free-Space Laser Communication and Atmospheric Propagation XXVII

KEYWORDS: Eye, Quantum wells, Modulation, Indium, Laser applications, Data transmission, Semiconductor lasers, Gallium nitride, Telecommunications, Free space optical communications

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PROCEEDINGS ARTICLE | March 13, 2015

Advances in single mode and high power AlGaInN laser diode technology for systems applications

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Quantum wells, Waveguides, Lasers, High power lasers, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Epitaxy

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PROCEEDINGS ARTICLE | March 2, 2015

A multi-wavelength (u.v. to visible) laser system for early detection of oral cancer

Proc. SPIE. 9328, Imaging, Manipulation, and Analysis of Biomolecules, Cells, and Tissues XIII

KEYWORDS: Photodetectors, Quantum wells, Cancer, Tissues, Sensors, Luminescence, Laser applications, Semiconductor lasers, Gallium nitride, Laser systems engineering

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PROCEEDINGS ARTICLE | March 8, 2014

Advances in AlGaInN laser diode technology

Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX

KEYWORDS: Quantum wells, Continuous wave operation, High power lasers, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Free space optics, Epitaxy

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PROCEEDINGS ARTICLE | November 5, 2013

Advances in AlGaInN laser diode technology for defence applications

Proc. SPIE. 8899, Emerging Technologies in Security and Defence; and Quantum Security II; and Unmanned Sensor Systems X

KEYWORDS: Defense and security, Continuous wave operation, High power lasers, Gallium arsenide, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Thermal effects, Free space optics

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PROCEEDINGS ARTICLE | May 23, 2013

Advances in AlGaInN laser diode technology for defence applications

Proc. SPIE. 8733, Laser Technology for Defense and Security IX

KEYWORDS: Defense and security, Quantum wells, High power lasers, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Thermal effects, Near field optics

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PROCEEDINGS ARTICLE | March 27, 2013

Latest developments in AlGaInN laser diode technology

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Quantum wells, Continuous wave operation, Cladding, High power lasers, Crystals, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride

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PROCEEDINGS ARTICLE | March 4, 2013

High optical power ultraviolet superluminescent InGaN diodes

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Continuous wave operation, Modulation, Waveguides, Ultraviolet radiation, Gallium nitride, Diodes, Superluminescent diodes, Indium gallium nitride, Near field optics

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PROCEEDINGS ARTICLE | November 19, 2012

Latest developments in AlGaInN laser diode technology for defence applications

Proc. SPIE. 8542, Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI

KEYWORDS: Defense and security, Quantum wells, High power lasers, Indium, Laser applications, Laser development, Semiconductor lasers, Gallium nitride, Telecommunications, Near field optics

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PROCEEDINGS ARTICLE | February 28, 2012

Electronic and thermal tuning of violet GaN coupled cavity laser

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Semiconductors, Refractive index, Tunable lasers, Quantum wells, Electrons, Semiconductor lasers, Ocean optics, Gallium nitride, Thermal effects, Temperature metrology

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PROCEEDINGS ARTICLE | February 28, 2012

Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Plasmonics, Refractive index, Waveguides, Cladding, Crystals, Semiconductor lasers, Gallium nitride, Optical simulations, Indium gallium nitride, Absorption

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PROCEEDINGS ARTICLE | February 28, 2012

GaN substrates with variable vicinal angles for laser diode applications

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Quantum wells, Optical lithography, Etching, Luminescence, Crystals, Indium, Semiconductor lasers, Photoresist materials, Gallium nitride, Indium gallium nitride

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PROCEEDINGS ARTICLE | February 17, 2011

Plasmonic cladding InGaN MQW laser diodes

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Plasmonics, Refractive index, Waveguides, Cladding, Nitrogen, Semiconductor lasers, Gallium nitride, Indium gallium nitride, Molecular beam epitaxy, Plasma

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PROCEEDINGS ARTICLE | February 16, 2009

Nitride laser diode arrays

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Semiconductors, Imaging systems, Cladding, Spectroscopy, Semiconductor lasers, CCD cameras, Gallium nitride, Near field, Laser damage threshold, Near field optics

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PROCEEDINGS ARTICLE | February 28, 2008

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: Quantum wells, Copper, Semiconductor lasers, Gallium nitride, Laser stabilization, Phonons, Laser damage threshold, Indium gallium nitride, Spectroscopes, Temperature metrology

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PROCEEDINGS ARTICLE | February 15, 2008

Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: Quantum wells, Magnesium, Diffusion, Reliability, Semiconductor lasers, Gallium nitride, Laser stabilization, Laser damage threshold, Indium gallium nitride, Temperature metrology

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PROCEEDINGS ARTICLE | February 14, 2008

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

Proc. SPIE. 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII

KEYWORDS: Polishing, Quantum wells, Light emitting diodes, Crystals, Indium, Manufacturing, Gallium nitride, Indium gallium nitride, Semiconducting wafers, Surface finishing

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PROCEEDINGS ARTICLE | February 8, 2007

Tunable broad-area InGaN laser diodes in external cavity

Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI

KEYWORDS: Mirrors, Antireflective coatings, Spectroscopy, Semiconductor lasers, Gallium nitride, Diodes, Indium gallium nitride, Pulsed laser operation, Spectroscopes, Diffraction gratings

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PROCEEDINGS ARTICLE | February 8, 2007

Comprehensive study of reliability of InGaN-based laser diodes

Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI

KEYWORDS: Crystals, Diffusion, Quantum efficiency, Reliability, Semiconductor lasers, Gallium nitride, Diodes, Laser damage threshold, Indium gallium nitride, Gallium

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PROCEEDINGS ARTICLE | February 8, 2007

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

Proc. SPIE. 6473, Gallium Nitride Materials and Devices II

KEYWORDS: Quantum wells, Waveguides, Optical properties, Luminescence, Photons, Semiconductor lasers, Gallium nitride, Aluminum, Gallium, Plasma

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PROCEEDINGS ARTICLE | January 25, 2007

Stimulated emission and optical gain in nitride-based compounds and quantum structures

Proc. SPIE. 6596, Advanced Optical Materials, Technologies, and Devices

KEYWORDS: Semiconductors, Quantum wells, Luminescence, Indium, Materials processing, Gallium nitride, Picosecond phenomena, Indium gallium nitride, Indium nitride, Systems modeling

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PROCEEDINGS ARTICLE | April 17, 2006

Load dislocation density broad area high power CW operated InGaN laser diodes

Proc. SPIE. 6184, Semiconductor Lasers and Laser Dynamics II

KEYWORDS: Continuous wave operation, High power lasers, Crystals, Semiconductor lasers, Gallium nitride, Aluminum, Indium gallium nitride, Gallium, Pulsed laser operation

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PROCEEDINGS ARTICLE | April 14, 2006

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

Proc. SPIE. 6184, Semiconductor Lasers and Laser Dynamics II

KEYWORDS: Mirrors, Quantum wells, Diffusion, Quantum efficiency, Reliability, Optical coatings, Semiconductor lasers, Gallium nitride, Laser damage threshold, Indium gallium nitride

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PROCEEDINGS ARTICLE | February 22, 2006

Broad-area high-power CW operated InGaN laser diodes

Proc. SPIE. 6133, Novel In-Plane Semiconductor Lasers V

KEYWORDS: Continuous wave operation, High power lasers, Crystals, Semiconductor lasers, Gallium nitride, Diodes, Laser damage threshold, Indium gallium nitride, Gallium, Pulsed laser operation

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PROCEEDINGS ARTICLE | April 1, 2005

Properties of violet laser diodes grown on bulk GaN substrates

Proc. SPIE. 5738, Novel In-Plane Semiconductor Lasers IV

KEYWORDS: Continuous wave operation, Cladding, Crystals, Electrons, Semiconductor lasers, Gallium nitride, Aluminum, Laser crystals, Gallium, Pulsed laser operation

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PROCEEDINGS ARTICLE | May 11, 2004

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Proc. SPIE. 5365, Novel In-Plane Semiconductor Lasers III

KEYWORDS: Mirrors, Etching, High power lasers, Crystals, Semiconductor lasers, Gallium nitride, Sapphire, Diodes, Gallium, Temperature metrology

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PROCEEDINGS ARTICLE | August 28, 2002

Optoelectronic devices built on bulk GaN substrates

Proc. SPIE. 10303, Gallium-Nitride-based Technologies: A Critical Review

KEYWORDS: Light emitting diodes, Optical properties, High power lasers, Crystals, Semiconductor lasers, Gallium nitride, Optoelectronic devices, Diodes, Homoepitaxy

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PROCEEDINGS ARTICLE | April 17, 2001

Epitaxy on GaN bulk crystals

Proc. SPIE. 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

KEYWORDS: Luminescence, Crystals, X-ray diffraction, Reflectivity, Atomic force microscopy, Gallium nitride, Sapphire, Epitaxy, Metalorganic chemical vapor deposition, Single crystal X-ray diffraction

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