Dr. Mike Pochkowski Profile

Dr. Mike Pochkowski

Director of Sales

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 20 October 2006 Paper

Optical issues of thin organic pellicles in 45-nm and 32-nm immersion lithography

Kevin Lucas, Joseph Gordon, Will Conley, Mazen Saied, Scott Warrick, Mike Pochkowski, Mark Smith, Craig West, Franklin Kalk, Jan Pieter Kuijten

Proceedings Volume 6349, 63490K (2006) https://doi.org/10.1117/12.686741

KEYWORDS: Lithography, Apodization, Reticles, Polarization, Spatial frequencies, Pellicles, Photomasks, Optical proximity correction, Critical dimension metrology, Semiconducting wafers

Read Abstract +

Proceedings Article | 6 December 2004 Paper

A complementary lithographic simulation method for improved yields following full-chip DRC

Peter Nikolsky, Rama Tweg, Mike Pochkowski

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.593125

KEYWORDS: Lithography, Calibration, Manufacturing, Design for manufacturing, Photomasks, Artificial intelligence, Optical proximity correction, Photoresist processing, Yield improvement, Design for manufacturability

Read Abstract +

Proceedings Article | 30 July 2002 Paper

Tuning and simulating a 193-nm resist for 2D applications

William Howard, Vincent Wiaux, Monique Ercken, Bang Bui, Jeff Byers, Mike Pochkowski

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474499

KEYWORDS: Lithography, Reticles, Metrology, Data modeling, Scanning electron microscopy, Finite element methods, Photomasks, Optical proximity correction, Semiconducting wafers, 3D image processing

Read Abstract +

Proceedings Article | 22 August 2001 Paper

Metrology and analysis of two-dimensional SEM patterns

Chris Mack, Sven Jug, Rob Jones, Prasad Apte, Scott Williams, Mike Pochkowski

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436763

KEYWORDS: Lithography, Reticles, Edge detection, Metrology, Etching, Image processing, Scanning electron microscopy, Shape analysis, Line edge roughness, Semiconducting wafers

Read Abstract +

Proceedings Article | 22 August 2001 Paper

Characterization of optical proximity correction features

John Allgair, Michelle Ivy, Kevin Lucas, John Sturtevant, Richard Elliott, Chris Mack, Craig MacNaughton, John Miller, Mike Pochkowski, Moshe Preil, John Robinson, Frank Santos

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436743

KEYWORDS: Lithography, Reticles, Optical lithography, Etching, Scanning electron microscopy, Photomasks, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Tolerancing

Read Abstract +

Proceedings Article | 22 August 2001 Paper

Application of critical shape analyses to two-dimensional patterns

Mike Pochkowski, Chris Mack, Bryan Kasprowicz

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436740

KEYWORDS: Lithography, Reticles, Etching, Scanning electron microscopy, Photomasks, Shape analysis, Optical proximity correction, Mask making, Critical dimension metrology, Semiconducting wafers

Read Abstract +

Proceedings Article | 30 December 1999 Paper

Improved critical dimension control in 0.8-NA laser reticle writers

Henry Chris Hamaker, Gregory Valentin, Jerry Martyniuk, Brenda Martinez, Mike Pochkowski, Lorna Hodgson

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373353

KEYWORDS: Reticles, Etching, Ultraviolet radiation, Composites, Photodiodes, Optical testing, Printing, Photoresist materials, Critical dimension metrology, Photoresist developing

Read Abstract +

Proceedings Article | 30 December 1999 Paper

Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

Benjamen Rathsack, Cyrus Tabery, Timothy Stachowiak, Tim Dallas, Cheng-Bai Xu, Mike Pochkowski, C. Grant Willson

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373362

KEYWORDS: Lithography, Transparency, Deep ultraviolet, Photomasks, Absorbance, Mask making, Photoresist processing, Photoresist developing, Picture Archiving and Communication System, Absorption

Read Abstract +

I-line optical pattern generators using non-chemically amplified resists have become the workhorses for high throughput mask fabrication. The demand for smaller and more uniform features on photomasks has driven the development of a 257 nm optical pattern generator. A non-chemically amplified resist is being developed to maximize the performance of this new 257 nm mask tool. Resist characterization and lithography simulation are being used to formulate a non-chemically amplified resist for 257 nm optical pattern generators. Non- chemically amplified resists are advantageous for us in mask fabrication due to their storage and post-exposure stability. Chemically amplified resists may provide higher performance but they also require environmental mini-environments and a post-exposure bake equipment not commonly present in mask houses. Diazonaphthoquinone (DNQ)/novolak resists have not been used for DUV Integrated Circuit (IC) applications mainly due to the low sensitivity and the strong absorbance of the DNQ photoactive compound (PAC) at 248 nm. However, a 2,1,4 DNQ based resist has been characterized that bleaches at 257 nm and inhibits novolak. The photoproduct of the 2,1,4 DNQ PAC is much more transparent at 257 nm than 248 nm. Novolak resin is too strongly absorbing for use in formulating efficient 248 nm resists, but novolak has an absorbance minimum at 257 nm that provides transparency similar to poly (hydroxystyrene). Lithography simulation is being used to develop a non- chemically amplified resist to minimize the expensive iteration of manufacturing trials. An exposure system using a 257 nm frequency double Ar laser system has been constructed to study the resist photokinetics. Dill exposure parameters (A, B and C) have been extracted for a 2,1,4 DNQ/novolak based resist. Dissolution rate measurements have been made with a DRM developed at the University of Texas at Austin. Simulation is used to determine the optimal resist absorption, bleaching, dose and dissolution properties to maximize resolution. It is possible to formulate a high performance resist for 257 nm if care is taken in optimization of the formulation.

Proceedings Article | 11 June 1999 Paper

Optical lithography simulation and photoresist optimization for photomask fabrication

Benjamen Rathsack, Cyrus Tabery, Steven Scheer, Mike Pochkowski, Cecilia Philbin, Franklin Kalk, Clifford Henderson, Peter Buck, C. Grant Willson

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350173

KEYWORDS: Lithography, Data modeling, Chromium, Photoresist materials, Refraction, Photomasks, Optical simulations, Photoresist processing, Device simulation, Picture Archiving and Communication System

Read Abstract +

Proceedings Article | 28 April 1999 Paper

Advantages of isofocal printing in maskmaking with the ALTA 3500

Scott Fuller, Mike Pochkowski

Proceedings Volume 3741, (1999) https://doi.org/10.1117/12.346876

KEYWORDS: Lithography, Etching, Dry etching, Inspection, Printing, Photomasks, Wet etching, Critical dimension metrology, Photoresist processing, Picture Archiving and Communication System

Read Abstract +

Showing 5 of 10 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years