Metamorphic multiple-junction soalr cells based on III-V compound semiconductor have advantages of more degree
of freedom in selection of bandgaps of subcells. Recently, Spectrolab, Inc. reported a high conversion efficiency of
40.7% in a triple-junction Ga0.44In0.56P/Ga0.92In0.08As/Ge solar cell where the top and middle cells are lattice-mismatched
to Ge substrate. Optimization of device structure of such metamorphic Ga0.44In0.56P/Ga0.92In0.08As/Ge solar cell is
important to increase its efficiency. In this work, two-dimensional simulation has been performed on the metamorphic
Ga0.44In0.56P/Ga0.92In0.08As/Ge solar cell. Efficiency dependence of the Ga0.44In0.56P/Ga0.92In0.08As/Ge triple-junction solar
cell on the base layer thickness and the InGaAs graded buffer layer thickness has been investigated. It has been found
that the efficiency depends significantly on the thickness of the GaInP base layer. The metamorphic triple junction solar
cell has hightest efficiency when the thicknesses of the GaInP base layer, the GaInAs base layer and the GaInAs graded buffer layer connecting the Ge substrate and GaInAs middle-cell are 0.35 μm, 2.5 μm and 0.15 μm, respectively.
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