In this study, uniform InAs QDs were grown on the GaAs (001) substrate by MBE by the S-K mode. The effects of strain reducing layer and rapid thermal anneling on the optical properties of InAs/(In)GaAs QDs were investigated by PL measurements. The annealing results in PL peak energy red-shift which strongly depends on In composition of InxGaAs strained reducing layer , QDs with lower density and/or capped by an InGaAs layer are very sensitive to the annealing. At given annealing conditions, PL peak energy blue-shift of low-density QDs is much larger than that of high density QDs.
High quality crack-free GaN layers were successfully grown and the InGaN/GaN based blue LEDs
fabricated on patterned Si (111) substrates. In addition to using the patterned growth technique, thin AlN and SiNx
interlayers grown at high temperatures were also employed to partially release the residual stress and to further
improve the crystalline quality. 300 µm square blue LEDs fabricated on the islands, without thinning and package,
exhibited a high output power of around 0.68 mW at a drive current of 20 mA.