Intra-body Body Communication (IBC) is a communication technology in which human body is used as a signal
transmission medium. Due to its unique characters, IBC technology is proposed as a novel and promising technology for
personal area network (PAN), computer network access, implant biomedical monitoring, human energy transmission,
etc. In this paper, investigation has been done in the computer simulation of the electrostatic coupling IBC by using the
developed finite-element models, in which (1) the incidence and reflection of electronic signal in the upper arm model
were analyzed by using the theory of electromagnetic wave, (2) the finite-element models of electrostatic coupling IBC
were developed by using the electromagnetic analysis package of ANSYS software, (3) the signal attenuation of
electrostatic coupling IBC were simulated under the conditions of different signal frequency, electrodes direction,
electrodes size and transmission distance. Finally, some important conclusions are deduced on the basis of simulation
Micro-electroplating technology has an increasingly wider application in the fabrication of MEMS devices. In order to fabricate a double-width cantilever beam which has three different electroplated areas. The proper composition of the bath solution is obtained through experiments firstly in the paper. Then the effects of the peak of current density, duty cycle and pause time on the surface morphology of the electroplated nickel are studied experimentally to make sure the regulating range of pulsed parameters. And at last the double-width cantilever beam is fabricated using lithographic, micro-electroplating and sacrificial layer releasing processes. The results show that the surface of the beam is bright and smooth, and the nucleation rate increases steadily. But the thickness of the three parts with different width is different which can be modified by increasing the duty cycle and reducing the current density to some extent.
Simulations and experiments on three kinds of Si tip fabrication techniques had been done, which are Anisotropic Dry Etching (ADE) , Anisotropic Wet Etching (AWE) and AWE combining with bonding. The simulation results showed that the parameters applied in the ADE and AWE should be controlled much more precisely than AWE combining with bonding to get expected tips. The exp eriments prove that the parameters of fabricating silicon tip by ADE and AWE have little
tolerance. The conclusions on AWE combining with bonding drew from simulations are verified in the detail experiments. From the simulations and experiments, excellent reliability and controllability are witnessed in AWE combining with bonding and a tip with top diameter within 23.44nm had been achieved.