Dr. Mingxing Wang Profile

Dr. Mingxing Wang

at Univ of North Carolina at Charlotte

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Publications (8)

PROCEEDINGS ARTICLE | April 15, 2008

Effect of PAG and matrix structure on PAG acid generation behavior under UV and high-energy radiation exposure

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Deep ultraviolet, Polymers, Matrices, Molecules, Photoresist materials, Ionization, Picosecond phenomena, Photolysis, Polymer thin films, Absorption

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Chemically amplified resists (CAR) have successfully facilitated the development of deep ultra-violet (DUV) and 193 nm lithography techniques for more than two decades due to their acid-catalyzed deprotection scheme that enhances their photospeed. This acid-catalyzed mechanism provides a method for amplifying the initial chemical reactions caused by interaction of radiation with the resist film, thus making each interaction event between radiation and resist more productive. However, when switching from low energy photolysis to high energy radiolysis, changes in the manner in which the radiation interacts with the resist material can alter the acid generation efficiency and mechanism of PAG excitation. In high energy radiation cases where the radiation energy exceeds the ionization potential of the PAG and the polymer resin, the radiation absorption in the resist film becomes non-selective. The ratio of PAG excited by direct excitation as compared to polymer or matrix sensitization pathways can shift heavily in favor of matrix sensitization in such high energy exposure cases. Such sensitization pathways may become a potential method for enhancing resist sensitivity under high energy radiation through careful selection of matrix and PAG materials. A better understanding and study the efficiency of acid generation through direct and indirect PAG excitation pathways and the effect of PAG and matrix structure on these pathways would be extremely valuable for the design of future high sensitivity resist materials. In this work, the acid generation of typical ionic (onium salt) and non-ionic PAGs under DUV (248 nm) and electron-beam exposure in polymer film have been studied. The effect of PAG type and structure on its acid generation under photolysis and radiolysis has been determined. The effect of polymer resin structure on PAG photoacid generation under photolysis and radiolysis has also been investigated. Concepts for PAG and polymer design for producing enhanced sensitivity resists for excitational and ionizational exposure is discussed.

PROCEEDINGS ARTICLE | March 26, 2008

High refractive-index resists composed of anionic photoacid generator (PAG) bound polymers for 193 nm immersion lithography

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Lithography, Refractive index, Nanoparticles, Polymers, Metals, Particles, Zinc, Immersion lithography, Nanocomposites, Lead

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PROCEEDINGS ARTICLE | March 26, 2008

Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography

Proc. SPIE. 6923, Advances in Resist Materials and Processing Technology XXV

KEYWORDS: Lithography, Deep ultraviolet, Polymers, Silicon, Scanning electron microscopy, NOx, Extreme ultraviolet lithography, Line edge roughness, Polymer thin films, Absorption

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PROCEEDINGS ARTICLE | March 23, 2007

Novel polymeric anionic photo-acid generators (PAGs) and photoresists for sub-100-nm patterning by 193-nm lithography

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Lithography, Optical lithography, Etching, Polymers, Resistance, Photoresist materials, Polymerization, Line edge roughness, Fluorine, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 23, 2007

Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Lithography, Electron beam lithography, Optical lithography, Polymers, Image processing, Photoresist materials, Polymerization, Extreme ultraviolet, Extreme ultraviolet lithography, Line edge roughness

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PROCEEDINGS ARTICLE | March 23, 2007

Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Lithography, Polymers, Silicon, Diffusion, Image resolution, Photoresist materials, Line edge roughness, Analog electronics, Semiconducting wafers, Polymer thin films

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Substantially improved photoresist material designs, which can provide higher photosensitivity and precise critical dimension and edge roughness control, will be required to enable the application of next generation lithography technology to the production of future sub-65 nm node IC device generations. The development and characterization of novel material platforms that solve the aforementioned basic problems with chemically amplified resists (CARs) is essential and is already one of the major subjects of modern lithography research. In that regard, we have pursued development of a variety of 193 nm and EUV CARs that contain photoacid generator (PAG) units covalently bonded directly to the resin polymer backbone. However, the detailed structure-property relationships that result from this direct attachment of the PAG functional group to the polymer have previously not yet been rigorously characterized. In this work, the lithographic properties of a polymer-bound PAG CAR (GBLMA-co-EAMA-co-F4-MBS.TPS) and its blended-PAG analog resist (GBLMA-co-EAMA blend F4-IBBS.TPS) were studied and compared. The direct incorporation of PAG functionality into the resist polymer, where the resulting photoacid remains bound to the polymer, showed improved photosensitivity, resolution, and lower LER as compared with the analogous blended-PAG resist. The improved resolution and LER were expected due to the restricted photoacid diffusion and uniform PAG distribution provided by direct incorporation of the PAG into the polymer backbone to make a single-component resist material. The ability to load higher levels of PAG into the resist provided by this PAG incorporation into the polymer, as compared to the low PAG concentrations attainable by traditional blending approaches, overcomes the sensitivity loss that should result from reduction in photoacid diffusivity and concomitant smaller acid-catalytic chain lengths. In fact, the polymer-bound PAG resist achieves a faster photospeed than the blended-PAG analog material under DUV radiation in the case of the materials reported here while still providing all of the aforementioned improvements such as the improved line edge roughness.

PROCEEDINGS ARTICLE | March 31, 2006

Fundamental studies of the properties of photoresists based on resins containing polymer-bound photoacid generators

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: FT-IR spectroscopy, Data modeling, Polymers, Molecules, Diffusion, Reflectivity, Photoresist materials, Extreme ultraviolet lithography, Statistical modeling, Polymer thin films

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PROCEEDINGS ARTICLE | March 29, 2006

Resists for sub-100nm patterning at 193nm exposure

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: Optical lithography, Roads, Polymers, Diffusion, Scanning electron microscopy, Applied research, Polymerization, Line edge roughness, Semiconducting wafers, Chemically amplified resists

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