Mr. Mitsuki Hayashida Profile

Mitsuki Hayashida

at Tokyo Univ of Science

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Author

Publications (4)

SPIE Journal Paper | 18 October 2022 Open Access

Single event tolerance of x-ray silicon-on-insulator pixel sensors

Kouichi Hagino, Mitsuki Hayashida, Takayoshi Kohmura, Toshiki Doi, Shun Tsunomachi, Masatoshi Kitajima, Takeshi Go Tsuru, Hiroyuki Uchida, Kazuho Kayama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Syuto Yonemura, Tatsunori Ishida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

JATIS, Vol. 8, Issue 04, 046001, (October 2022) https://doi.org/10.1117/12.10.1117/1.JATIS.8.4.046001

KEYWORDS: X-rays, Tolerancing, Sensors, Silicon, Satellites, Ions, Particles, X-ray astronomy, Digital electronics, Satellite imaging

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SPIE Journal Paper | 17 June 2022 Open Access

X-ray radiation damage effects on double-SOI pixel detectors for the future astronomical satellite FORCE

Masatoshi Kitajima, Kouichi Hagino, Takayoshi Kohmura, Mitsuki Hayashida, Kenji Oono, Kousuke Negishi, Keigo Yarita, Toshiki Doi, Shun Tsunomachi, Takeshi Go Tsuru, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Takaaki Tanaka, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Shuto Yonemura, Tatsunori Ishida, Yasuo Arai, Ikuo Kurachi

JATIS, Vol. 8, Issue 02, 026007, (June 2022) https://doi.org/10.1117/12.10.1117/1.JATIS.8.2.026007

KEYWORDS: X-rays, Sensors, Radiation effects, X-ray detectors, Silicon, Electrons, Interfaces, Satellites, Iron, X-ray astronomy

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SPIE Journal Paper | 9 August 2021

Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure

Mitsuki Hayashida, Kouichi Hagino, Takayoshi Kohmura, Masatoshi Kitajima, Keigo Yarita, Kenji Oono, Kousuke Negishi, Takeshi Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

JATIS, Vol. 7, Issue 03, 036001, (August 2021) https://doi.org/10.1117/12.10.1117/1.JATIS.7.3.036001

KEYWORDS: X-rays, Sensors, Diodes, Silicon, CMOS sensors, Capacitance, Satellites, CMOS technology, X-ray detectors, X-ray technology

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X-ray silicon-on-insulator (SOI) pixel sensors, “XRPIX,” are being developed for the next-generation x-ray astronomical satellite, “FORCE.” The XRPIX is fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si complementary metal oxide semiconductor (CMOS) circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with x-ray signals at the timing of x-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor x-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at Heavy Ion Medical Accelerator in Chiba in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3 % , yielding an energy resolution of 260.1 ± 5.6 eV at the full-width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

Proceedings Article | 28 December 2020 Presentation + Paper

Proton radiation hardness of x-ray SOI pixel detectors with pinned depleted diode structure

Mitsuki Hayashida, Takayoshi Kohmura, Kouichi Hagino, Kenji Oono, Kousuke Negishi, Keigo Yarita, Masatoshi Kitajima, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Tsuyoshi Hamano, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Proceedings Volume 11454, 114540P (2020) https://doi.org/10.1117/12.2562392

KEYWORDS: Sensors, X-rays, X-ray detectors, Diodes, Satellites, CMOS sensors, Detector development, X-ray astronomy, Astronomy, Silicon

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