Multiple-Patterning Technology (MPT) is still the preferred choice over EUV for the advanced technology nodes, starting the 20nm node. Down the way to 7nm and 5nm nodes, Self-Aligned Multiple Patterning (SAMP) appears to be one of the effective multiple patterning techniques in terms of achieving small pitch of printed lines on wafer, yet its yield is in question. Predicting and enhancing the yield in the early stages of technology development are some of the main objectives for creating test macros on test masks. While conventional yield ramp techniques for a new technology node have relied on using designs from previous technology nodes as a starting point to identify patterns for Design of Experiment (DoE) creation, these techniques are challenging to apply in the case of introducing an MPT technique like SAMP that did not exist in previous nodes. <p> </p>This paper presents a new strategy for generating test structures based on random placement of unit patterns that can construct more meaningful bigger patterns. Specifications governing the relationships between those unit patterns can be adjusted to generate layout clips that look like realistic SAMP designs. A via chain can be constructed to connect the random DoE of SAMP structures through a routing layer to external pads for electrical measurement. These clips are decomposed according to the decomposition rules of the technology into the appropriate mandrel and cut masks. The decomposed clips can be tested through simulations, or electrically on silicon to discover hotspots. <p> </p>The hotspots can be used in optimizing the fabrication process and models to fix them. They can also be used as learning patterns for DFM deck development. By expanding the size of the randomly generated test structures, more hotspots can be detected. This should provide a faster way to enhance the yield of a new technology node.
To transfer an electronic circuit from design to silicon, a lot of stages are involved in between. As technology evolves, the design shapes are getting closer to each other. Since the wavelength of the lithography process didn't get any better than 193nm, optical interference is a problem that needs to be accounted for by using Optical Proximity Correction (OPC) algorithms. In earlier technologies, simple OPC was applied to the design based on spatial rules. This is not the situation in the recent technologies anymore, since more optical interference took place with the intensive scaling down of the designs. Model-based OPC is a better solution now to produce accurate results, but this comes at the cost of the increased run time. Electronic Design Automation (EDA) companies compete to offer tools that provide both accuracy and run time efficiency. In this paper, we show that optimum usage of some of these tools can ensure OPC accuracy with better run time. The hybrid technique of OPC uses the classic rule-based OPC in a modern fashion to consider the optical parameters, instead of the spatial metrics only. Combined with conventional model-based OPC, the whole flow shows better results in terms of accuracy and run time.