Solar blind Al<sub>0.5</sub>Ga<sub>0.5</sub>N/AlN metal-semiconductor-metal photodetectors (MSM PDs) are characterized by means of photocurrent spectroscopy. In order to enhance the external quantum efficiency (EQE) at low bias voltages several strategies have been adopted including absorber layer thicknesses, electrode layout and metallization scheme. Analysis of experimental EQE-bias characteristics under top and bottom illumination conditions reveals (1) a correlation between EQE and electrode pair density for symmetric electrode designs and (2) a slight asymmetry of the EQE with respect to bias polarity for bottom-illuminated MSM PD consisting of electrode pairs with different electrode widths (asymmetric design) and (3) zero-bias operation for a-MSM PD consisting of electrode pairs with different metallization schemes. In addition, the combination of thin absorber layer and asymmetric electrode design leads to high EQE values under bottom illumination at very low voltages and zero-bias operation is achieved for the a-MSM detector. The zero-bias EQE of the a-MSM is further enhanced by combining the symmetric detector design with a high electrode pair density.
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarization and the
gain. We present gain measurements of semipolar (11-22) laser structures with differently oriented resonators and
for various polarization states. The optical polarization state and the thresholds for lasers on different semipolar
and nonpolar orientations are compared. The experimental results are accompanied by numerical calculations of
the material gain as well as investigation of the surface morphology and resulting waveguide losses in dependence
of the crystal orientation.