II-VI semiconductors have great importance in the fabrication and application of optoelectronic devices. CdTe is one of the most promising materials among photovoltaic materials. In this research work CdS/CdTe solar cell has been prepared using screen printing and sintering technique. Various factors affecting the surface morphology of CdS window layer were also investigated. Optical Microscopy, Scanning Electron Microscopy and Electrical characterization proved that best results can be achieved by increasing the sintering duration, the Mesh number and by CdCl<sub>2</sub> doping. CdS/CdTe solar cell with an area of 8.8 cm<sup>2</sup> was prepared. The Fill Factor was calculated to be 0.51, with Voc = 0.56 V and I<sub>sc</sub> = 31.5 mA. The efficiency was also measured and found to be 1.02%.
The absorption model plays an important role in the design of the microbolometer structure regarding the determination of the optimum thickness of the structure layers. Moreover, the infrared absorption depends on the wavelength of the radiation and the material properties. In this paper, we presented an Infrared absorption model with absorption coefficient of 96% at maximum absorption wavelength of 9.89μm which is very close to the expected value 10μm. This model was established by using MATLAB so that the simulation of the infrared absorption of the VOx microbolometer could be accomplished. In order to confirm the role of this modeling in the design of the device structure, comparison with other structures is also studied in this paper.