We reduce the problem of asymmetrical distribution of carriers (electrons and holes) by engineering the last barrier and electron blocking layer (EBL) of green indium gallium nitride (InGaN)-based multiquantum well light-emitting diodes. We employ stair-engineered EBL with a graded InGaN last quantum barrier to enhance the device performance. The efficiency droop ratio of the proposed device is ∼15 % at 100 A / cm2. Similarly, the light output power is also enhanced by about three times, as compared to the reference structure. In addition, a carrier transport issue across the active region is also mitigated in our design.