The researches of the possibility of Au nanoparticles formation in conditions of surface plasmon resonance (SPR) at
irradiation of the Au film / glass structure by YAG:Nd+3-laser nanosecond pulses of the p-polarization (tp = 10 ns) by fundamental (λ = 1.064 nm) and second harmonics (λ = 0.532 nm) are submitted. The morphology of an Au film surface
before and after laser action, Au fragments sizes and their surface distribution were investigated by the atom force
microscopy (AFM). The effect of Au nanoparticles formation was observed only at the second harmonic irradiation (λ=
0.532 μm) in SPR conditions in the Kretschmann configuration. The considerable difference between the average Au nanoparticles sizes δ created at the
SPR conditions, R = Rmin, δ ~ 80 nm that was obtained in the case out of SPR R≠Rmin δ ~ 1350 nm is established. Threshold energy density of micro-ablation Pthn is determined, that one in the case
of SPR Pthn ≈ 5.5 J•cm-2 was essentially lower than in the SPR absence, Pthn ≈ 8 J cm-2. The histogram obtained on the
AFM data has shown a high degree of the height sizes homogeneity of Au nanoparticles. Under the AFM data a
conclusion about the determining contribution of the
plasmon - polariton subsystem in formation process of Au nanoparticles
in SPR conditions at high levels of laser irradiation was made.
The review of results of submicron surface layers formation is presented under ultraviolet (UV) N2 - laser (λ = 0.337 μm, tp = 5 ns) ablation of silicon target in liquid environment C6H5CH3. The morphological and deformation state of a near-surface
Si layer was investigated by polarization modulation spectroscopy (PMS), atom force microscopy (AFM) and
Raman spectra methods before and after irradiation. After irradiation AFM data shows the formation of submicron
structures with hexagonal-like type of regularity on Si surface, PMS spectra indicates the increasing of refractive index,
Raman spectroscopy reveals the broad band in the range 740-800 cm-1. All that facts allow us to assume the possibility
of SiC-like layer formation on silicon monocrystal surface by laser stimulated diffusion of carbon atoms from liquid
media. The surface morphology and composition of the irradiated surface varies considerable with the number of laser shots.
A mechanism of formation of graded band-gap based on Thermogradient Effect (TGE) is proposed in Cd1-xZnxTe at
irradiation by second harmonic of a Q-switched YAG:Nd laser. According to the effect, the interstitial atoms of Cd (Cdi)
in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence (PL) spectra studied at 5 K
show that concentration of Zn atoms increases due to aggregation of VCd with Zn after laser irradiation. Formation of a
graded band-gap in Cd1-xZnxTe crystal at irradiation by second harmonica of YAG:Nd laser by is shown to be possible.
Solid phase luminescence determination of aluminum using UV laser and optical multichannel spectra analyser (OMA) was descnbed Silica (SG) modified sith ion associate high molecular eiglu quatemar ammornurn salt (QAS) lumogallion (LG) was used as active sensor element Photoluimnescence (PL) of the modified sorbent as excited b) pulse N2 laser and then studied by OMA using CCD camera for detection of the pulse PL spectra and IBM PC for analyses It was shown that
the intensity of PL pulse peaks of the modified SG noticeabl increased ith the nsing of Al (III) concentration in the range
of 1 10-6 ÷ 1 10-4M. The detection limit of Al as 1 10-7 mole/1 at sample volume 50 ml and mass of the sorbent 0.05 g. PL spectra of Al-LG complex formed on the surface is consisted of two bonds Their possible reasons are discussed The developed method can be successfully used for working out optical sensor for aluminum determination in the environment.
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