A large-area X-ray CMOS image sensor (LXCIS) is widely used in mammography, non-destructive inspection, and animal CT. For LXCIS, in spite of weakness such as low spatial and energy resolution, a Indirect method using scintillator like CsI(Tl) or Gd2O2S is still well-used because of low cost and easy manufacture. A photo-diode for X-ray imaging has large area about 50 ~ 200 um as compared with vision image sensors. That is because X-ray has feature of straight and very small light emission of a scintillator. Moreover, notwithstanding several structure like columnar, the scintillator still emit a diffusible light. This diffusible light from scintillator can make spatial crosstalk in X-ray photodiode array because of a large incidence angle. Moreover, comparing with vision image sensors, X-ray sensor doesn’t have micro lens for gathering the photons to photo-diode. In this study, we simulated the affection of spatial crosstalk in X-ray sensor by comparing optical sensor. Additionally, the chip, which was fabricated in 0.18 um 1P5M process by Hynix in Korea, was tested to know the effect of spatial crosstalk by changing design parameters. From these works, we found out that spatial crosstalk is affected by pixel pitch, incident angle of photons, and micro lens on each pixels.