We demonstrate the 4-stage traveling wave photodetector (TWPD) with monolithically integrated bias circuitry network based on a silicon photonics process. A bias circuitry network comprised of inductors is integrated at the input terminal to provide the bias voltage for device while prevent the leak of the RF signal into the voltage circuitry. Experimentally, the maximum RF powers of load terminal are 8 dB higher than input end at high frequencies, validated the effectiveness of RF-choke.
Multimode waveguide Bragg gratings filters with square shape amplitude responses and well-controlled dispersion characteristics are achieved by the Time-Domain Layer Peeling method for the first time, the Bragg grating structures can be mapped by the complementary lateral-misalignment modulation apodization. Three filters with different amplitude and phase responses are demonstrated. For the dispersion-less filter, the dispersion compensation filter and the three-channel dispersionless filter, the 3 dB bandwidth and the group delay of the realizable spectral responses are 4.0 nm, 4.7 nm, 2.1 nm and 0 ps/nm, 5.7 ps/nm, 0 ps/nm, the group delay ripples have a standard deviation of 1.7 ps, 1.5 ps, and 2.0 ps. The multimode relaxes the fabrication requirement in terms of both the lithography resolution and minimum feature size/spacing while maintaining the advantages of low insertion loss.
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