Dr. Natalia V. Kryzhanovskaya Profile

Dr. Natalia V. Kryzhanovskaya

Leading researcher at HSE Univ

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Author

Publications (14)

Proceedings Article | 18 April 2021 Presentation + Paper

Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon

N. Kryzhanovskaya, E. Moiseev, A. Nadtochiy, M. Maximov, A. Dragunova, M. Fetisova, M. Kulagina, Yu. Guseva, S. Mintairov, N. Kalyuzhnyy, M. Tang, M. Liao, J. Wu, S. Chen, H. Liu, A. Zhukov

Proceedings Volume 11775, 117750P (2021) https://doi.org/10.1117/12.2589118

KEYWORDS: Silicon, Semiconductor lasers, Quantum dots, Hybrid silicon lasers, Resistance, Gallium arsenide, Thin films, Silicon films, Semiconducting wafers, Optoelectronics

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Proceedings Article | 13 April 2020 Presentation + Paper

Microdisk lasers for high-sensitive protein detection in microfluidic devices

N. Kryzhanovskaya, A. S. Bukatin, A. A. Korenev, M. V. Fetisova, N. A. Filatov, M. V. Maximov, I. V. Reduto, A. V. Raskhodchikov, A. A. Lipovskiy, A. E. Zhukov

Proceedings Volume 11361, 113610S (2020) https://doi.org/10.1117/12.2555037

KEYWORDS: Refractive index, Sensors, Semiconductor lasers, Optical microcavities, Proteins, Microfluidics, Quantum dots, Semiconductors, Molecules

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Proceedings Article | 1 April 2020 Presentation + Paper

Small-signal modulation and 10 Gb/s data transmission by microdisk lasers based on InGaAs/GaAs quantum well-dots

N. Kryzhanovskaya, E. Moiseev, F. Zubov, M. Maximov, S. Blokhin, N. Kalyuzhnyy, S. Mintairov, M. Kulagina, N. Ledentsov, A. Zhukov

Proceedings Volume 11356, 1135608 (2020) https://doi.org/10.1117/12.2554552

KEYWORDS: Modulation, Data transmission, Quantum wells, Semiconductor lasers, Indium gallium arsenide, Light sources, Optical communications, Microrings, Laser applications

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Proceedings Article | 23 May 2018 Presentation

Continuous wavelength operation of injection III-V microdisk lasers directly grown on Si substrate with emission wavelength beyond 1.2 µm (Conference Presentation)

Natalia Kryzhanovskaya, Eduard Moiseev, Yuliya Polubavkina, Mikhail Maximov, Andrey Lipovskii, Mingchu Tang, Mengya Liao, Jiang Wu, Siming Chen, Alexandr Dubinov, Nikolay Baidus, Dmitriy Yurasov, Yulia Guseva, Zakhary Krasilnik, Huiyun Liu, Alexey Zhukov

Proceedings Volume 10682, 106820V (2018) https://doi.org/10.1117/12.2306225

KEYWORDS: Silicon, Quantum wells, Semiconductor lasers, Quantum dots, Laser damage threshold, Photonic integrated circuits, Resonators, Optical lithography, Plasma etching, Plasma

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A combination of high operation temperatures and small sizes of diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this work, we report on electrically-pumped III-V microdisk lasers monolithically grown on Si substrates with active regions of two kinds: either an InGaAs/GaAs quantum well (QW) or InAs/InGaAs/GaAs quantum dots (QDs). Microdisk resonators were defined using photolithography and plasma chemical etching. The active region diameter was varied from 11 to 31 µm. Microlasers were tested without external cooling at room and elevated temperatures. The QW laser structure was epitaxially grown by MOCVD on silicon (100) with an intermediate MBE-grown Ge buffer. Under pulsed injection (0.5-µs-long injection pulses with 150 Hz repetition rate), lasing is achieved in QW microlasers with diameters of 23-31 µm with a minimal threshold current density of 28 kA/cm^2. Quasi-single mode lasing (SMSR is up to 20 dB) is observed with emission wavelength around 988 nm. To the best of our knowledge, this is the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. Quantum wells are typically characterized by high optical gain and high direct modulation bandwidth, which can be important in view of further miniaturization of microlasers and their future application. The sidewall passivation can be helpful to reduce the threshold current. As compared to QWs, quantum dots demonstrate reduced sensitivity to threading dislocations and other crystalline defects as well as to sidewall recombination owing to a suppressed lateral transport of charge carriers which prevents their diffusion towards non-radiate recombination centers. The QD laser structure was directly grown by MBE on Si (001) substrate with 4° offcut to the [011] plane. QD microlasers were tested at room temperature in CW regime with a DC current varied from 0 to 50 mA and at elevated temperatures under CW and pulsed excitation (0.5-µs-long injection pulses with 10 kHz repetition rate). The InAs/InGaAs QDs active region provides the wavelengths in the 1.32–1.35 µm spectral interval. At room temperature, lasing is achieved in microlasers with diameters of 14-30 µm with a minimal threshold current density of 600 A/cm2 (compare with that of 427 A/cm2 in edge-emitting laser). The threshold current density and specific thermal resistance of 0.004 °C×cm^2/mW are comparable to those of high-quality QD microdisk lasers on GaAs substrates. Lasing wavelength demonstrates low sensitivity to current-induced self-heating. Lasing is single mode (SMSR 20 dB) with a dominant mode linewidth as narrow as 30 pm. Under CW excitation lasing sustains up to 60 °C in microlasers with diameter of 30 µm. Because of self-heating, an actual temperature of the active region is close to 100°C. Under pulsed excitation, the maximal lasing temperature is 110°C. To our best knowledge, these are the smallest microlasers on silicon operating at such elevated temperatures ever reported. Up to 90°C lasing proceeds on the ground state optical transition of QDs with wavelength about 1.35 µm. At higher temperatures, lasing wavelength jumps to the excited state transition.

Proceedings Article | 22 February 2017 Paper

Lasing of metamorphic hybrid 1300nm spectral band VCSEL under optical pumping up to 120 C

N. Kryzhanovskaya, E. Moiseev, A. Gladyshev, L. Ya. Karachinsky, I. Novikov, A. Babichev, S. Blokhin, M. Bobrov, Yu. Zadiranov, S. Troshkov, A. Yu. Egorov

Proceedings Volume 10098, 1009811 (2017) https://doi.org/10.1117/12.2250542

KEYWORDS: Vertical cavity surface emitting lasers, Optical pumping, Heterojunctions, Quantum wells, Gallium arsenide, Tantalum, Dielectrics, Gallium, Semiconductors, Sputter deposition

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Proceedings Article | 7 March 2016 Paper

High-temperature continuous wave operation (up to 100C) of InAs/InGaAs quantum dot electrically injected microdisk lasers

N. Kryzhanovskaya, E. Moiseev, Yu. Kudashova, F. Zubov, M. Kulagina, S. Troshkov, Yu. Zadiranov, D. Livshits, M. Maximov, A. Zhukov

Proceedings Volume 9767, 97670J (2016) https://doi.org/10.1117/12.2208322

KEYWORDS: Continuous wave operation, Quantum dots, Laser development, Optical interconnects, Telecommunications, Laser stabilization, Resistance, Gallium arsenide, Optoelectronic devices, Temperature metrology, Resonators, Optoelectronics, Optical circuits

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Proceedings Article | 19 February 2014 Paper

Nonplanar nanoselective area growth of InGaAs/InP

N. Kuznetsova, P. Colman, E. Semenova, S. Kadkhodazadeh, N. Kryzhanovskaya, S. Ek, W. Xue, Martin Schubert, A. Zhukov, K. Yvind

Proceedings Volume 8996, 899608 (2014) https://doi.org/10.1117/12.2037902

KEYWORDS: Etching, Waveguides, Photonic crystals, Photomasks, Indium gallium arsenide, Crystals, Luminescence, Quantum wells, Scanning electron microscopy, Scanning transmission electron microscopy

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Proceedings Article | 29 November 2012 Paper

Quantum dot lasers and relevant nanoheterostructures

Alexey Zhukov, Natalia Kryzhanovskaya, Artem Savelyev, Alexey Nadtochiy, Ekaterina Arakcheeva, Fedor Zubov, Vladimir Korenev, Mikhail Maximov, Yuri Shernyakov, Marina Kulagina, Ilia Slovinskiy, Daniil Livshits, Alexandros Kapsalis, Charis Mesaritakis, Dimitris Syvridis, Alexander Mintairov

Proceedings Volume 8552, 855202 (2012) https://doi.org/10.1117/12.2009055

KEYWORDS: Microrings, Near field scanning optical microscopy, Doping, Solids, Luminescence, Modulation, Quantum dots, Resonators, Temperature metrology, Quantum dot lasers

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Proceedings Article | 12 July 2006 Paper

High brilliance photonic band crystal lasers

V. Shchukin, N. Ledentsov, N. Gordeev, L. Karachinsky, N. Kryzhanovskaya, S. Kuznetsov, M. Lifshits, M. Maximov, I. Novikov, Yu. Shernyakov, T. Kettler, K. Posilovic, D. Bimberg

Proceedings Volume 6350, 635005 (2006) https://doi.org/10.1117/12.693348

KEYWORDS: Photonic crystals, Laser crystals, Waveguides, Semiconductor lasers, Refractive index, Crystals, Reflectivity, High power lasers, Gallium arsenide, Near field optics

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Proceedings Article | 13 June 2006 Paper

Epitaxial growth of quantum-dot heterostructures on metamorphic buffers

Alexey Zhukov, Alexey Vasilyev, Elizaveta Semenova, Natailia Kryzhanovskaya, Andrey Gladyshev, Mikhail Maximov, Victor Ustinov, Nikolai Ledentsov

Proceedings Volume 5946, 594616 (2006) https://doi.org/10.1117/12.639319

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Proceedings Article | 28 February 2006 Paper

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

M. Maximov, Yu. Shernyakov, I. Novikov, S. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, I. Soshnikov, Yu. Musikhin, N. Kryzhanovskaya, A. Sharon, U. Ben-Ami, V. Kalosha, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, D. Bimberg

Proceedings Volume 6115, 611513 (2006) https://doi.org/10.1117/12.661389

KEYWORDS: Waveguides, Photonic crystals, Semiconductor lasers, Refractive index, Crystals, Laser crystals, Light emitting diodes, Geometrical optics, Near field optics, Cladding

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Proceedings Article | 11 June 2003 Paper

The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

N. Kryzhanovskaya, A. Gladyshev, D. Sizov, Alexey Kovsh, Anrei Tsatsul'nikov, Jim Chi, Jyh-Shyang Wang, Li-Chung Wei, Victor Ustinov

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.510522

KEYWORDS: Optical properties, Annealing, Gallium arsenide, Epitaxy, Nitrogen, Heterojunctions, Chemical species, Stereolithography, Superlattices, Luminescence

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Proceedings Article | 11 June 2003 Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

Alexey Kovsh, Alexey Zhukov, Nikolay Maleev, Sergei Mikhrin, A. Vasil'ev, Yuri Shernyakov, Daniil Livshits, Mikhail Maximov, D. Sizov, N. Kryzhanovskaya, Nikita Pikhtin, V. Kapitonov, Ilya Tarasov, N. Ledentsov, Victor Ustinov, Jyh-Shyang Wang, Li-Chung Wei, Gray Lin, Jim Chi

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514262

KEYWORDS: High power lasers, Quantum wells, Quantum dots, Gallium arsenide, Semiconductor lasers, Indium arsenide, Indium gallium arsenide, Cladding, Solids, Laser damage threshold

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Proceedings Article | 11 June 2003 Paper

Investigation of the formation of InAs QDs in a AlGaAs matrix

D. Sizov, N. Kryzhanovskaya, A. Gladyshev, Yu Samsonenko, G. Cirlin, N. Polyakov, V. Egorov, A. Tonkih, Yu Musikhin, Anrei Tsatsul'nikov, N. Ledentsov, Victor Ustinov

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511241

KEYWORDS: Indium arsenide, Gallium arsenide, Indium gallium arsenide, Quantum dots, Laser stabilization, Transmission electron microscopy, Aluminum, Gallium, Epitaxy, Excitons

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Showing 5 of 14 publications

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