Mr. Nathan Antonovich Profile

Nathan Antonovich

at TEL Technology Ctr America LLC

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Author

Publications (5)

Proceedings Article | 9 April 2024 Poster + Paper

Roughness improvement by post-development treatment of CAR for high-NA EUV lithography

Kayoko Cho, Hikari Tomori, Cong Que Dinh, Seiji Nagahara, Arisa Hara, Seiji Fujimoto, Arnaud Dauendorffer, Lior Huli, Kanzo Kato, Nathan Antonovich, Makoto Muramatsu

Proceedings Volume 12957, 129571Q (2024) https://doi.org/10.1117/12.3010231

KEYWORDS: Chemically amplified resists, Extreme ultraviolet, Quenching, Extreme ultraviolet lithography, Line width roughness, Etching, Line edge roughness, Stochastic processes, High volume manufacturing, Semiconductors

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Proceedings Article | 28 November 2023 Presentation + Paper

Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure

Kanzo Kato, Seiji Nagahara, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Nayoung Bae, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Dinh Conque, Takahiro Kitano, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Proceedings Volume PC12750, PC127500G (2023) https://doi.org/10.1117/12.2687901

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Lithography, Semiconductors, Integrated circuits, Industry, Fiber optic illuminators, Fabrication, Etching

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Proceedings Article | 21 November 2023 Presentation + Paper

Advanced development for contact-holes of metal-oxide resists

Cong Que Dinh, Seiji Nagahara, Kanzo Kato, Shinichiro Kawakami, Yuhei Kuwahara, Soichiro Okada, Kayoko Cho, Hikari Tomori, Junji Nakamura, Shoichi Terada, Makoto Muramatsu, Alexandra Krawicz, Kathleen McInerney, Nathan Antonovich, Lior Huli

Proceedings Volume 12750, 1275009 (2023) https://doi.org/10.1117/12.2687434

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Photoresist processing, Metals

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. A simple traditional development process might be insufficient to clear the holes in contact-hole (CH) patterns and often causes missing hole defects around target-CD. In prior papers, a new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR) for line/space (L/S) and pillar patterns. ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient and reducing scums. In this work, this development technique was optimised for CH patterns to reduce both the local CD uniformity (LCDU) and to reduce the levels of missing contact holes at a lower exposure dose. This is made possible thanks to the capability of the updated version of ESPERT™ that can effectively remove the scums (resist residues) inside CH to extend the missing hole defect margins. The high development contrast of the new development technique results also in a much higher exposure latitude. Using 0.33 NA EUV scanners on 36-nmpitch hexagonal patterns, the new development enhanced exposure latitude (EL), failure free latitude (FFL), and failure free dose ranges at both ADI (after development inspection) and AEI (after etch inspection) for two diverse types of MORs. For instance, in the case of the reference MOR developed by ESPERT™, CHs were nicely transferred to a TiN layer, even for small CD holes of 14.7 nm. If compared to the data by conventional development, using the new method, the EL was increased from 16.0% to 49.1%, the FFL was extended from 2 nm to 6 nm, and the failure free dose range was increased from 13.3% to 72.2%. It was also possible to have EUV dose-to-size (DtS) of 28 mJ/cm² with EL of 49.9% at ADI, using the new development. With all those advantages, this new development method is expected to be the solution for CH pattern formation of negative tone MORs in EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Optimization of spin-on metal oxide resist performance via new development techniques on sub-30nm pitch patterning

Lior Huli, Kanzo Kato, Steven Gueci, Nathan Antonovich, Steven Grzeskowiak, David Hetzer, Eric Liu, Alexandra Krawicz, Satoru Shimura, Shinichiro Kawakami, Soichiro Okada, Karen Petrillo, Luciana Meli, Nicholas Latham, Yasiel Cabrera, Belle Antonovich

Proceedings Volume 12498, 1249822 (2023) https://doi.org/10.1117/12.2658880

KEYWORDS: Extreme ultraviolet, Metal oxides, Line edge roughness, Extreme ultraviolet lithography, Optical lithography, Inspection, Interfaces, Etching, Plasma etching, Photoresist processing

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Proceedings Article | 1 May 2023 Poster + Paper

Coater/developer-based techniques to achieve tight pitches towards high-NA EUV

Kanzo Kato, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Proceedings Volume 12498, 1249821 (2023) https://doi.org/10.1117/12.2657290

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Light sources and illumination, Etching, Coating thickness, Optical lithography, Printing, Lithography

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