Neal T. Sullivan
Vice President of Technology at Arradiance Inc
SPIE Involvement:
Conference Program Committee | Conference Chair | Author | Instructor
Publications (26)

Proceedings Article | 10 May 2005
Proc. SPIE. 5752, Metrology, Inspection, and Process Control for Microlithography XIX
KEYWORDS: Monte Carlo methods, Silica, Scanning electron microscopy, Computer simulations, Selenium, Imaging systems, Electron beams, Optical simulations, Semiconducting wafers, Statistical modeling

Proceedings Article | 10 May 2005
Proc. SPIE. 5752, Metrology, Inspection, and Process Control for Microlithography XIX
KEYWORDS: Line width roughness, Line edge roughness, Image acquisition, Monte Carlo methods, Image processing, Electronics, Photoresist processing, Optical simulations, Control systems, Polymers

Proceedings Article | 24 May 2004
Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII
KEYWORDS: Semiconducting wafers, Metrology, Electrons, Line edge roughness, Critical dimension metrology, Monte Carlo methods, Optical proximity correction, Silicon, Scanning electron microscopy, Photoresist materials

Proceedings Article | 24 May 2004
Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII
KEYWORDS: Critical dimension metrology, Atomic force microscopy, Semiconducting wafers, Monte Carlo methods, Metrology, Photoresist materials, Calibration, Scanning electron microscopy, Integrated circuits, Computer simulations

Proceedings Article | 10 July 2003
Proc. SPIE. 5042, Design and Process Integration for Microelectronic Manufacturing
KEYWORDS: Metrology, Diagnostics, Dimensional metrology, Optical lithography, Manufacturing, Process control, Image processing, Critical dimension metrology, Semiconducting wafers, Edge roughness

Showing 5 of 26 publications
Conference Committee Involvement (9)
Metrology, Inspection, and Process Control for Microlithography XXIII
23 February 2009 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XXII
25 February 2008 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XXI
26 February 2007 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XX
20 February 2006 | San Jose, California, United States
Metrology, Inspection, and Process Control for Microlithography XIX
28 February 2005 | San Jose, California, United States
Showing 5 of 9 Conference Committees
Course Instructor
SC108: Fundamentals of Critical Dimension Metrology
Critical Dimension (CD) Metrology involves measurement of planar structures on semiconductor, mask and thin film head substrates. This full day course provides an overview of CD metrology emphasizing Scanning Electron Microscope (SEM) applications for process control and characterization. Metrology specifications and methods for estimating measurement performance for each application are discussed. An overview of image formation in SEM is presented with a discussion of system consequences. Other methods of CD measurement and future trends in CD Metrology are explored.
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