At high current densities, the characteristics of organic laser diode structures are strongly influenced by a variety
of loss processes such as bimolecular annihilations, field-induced exciton dissociation and induced absorptions
due to polarons and triplet excitons. Here, we investigate a TE<sub>2</sub>-mode organic double-heterostructure laser diode
by numerical simulation. The electrical properties are described using a numerical drift-difusion model and the
optical characteristics are modeled using a transfer matrix method. When annihilation processes are included,
a threshold current density of 8.5 kA/cm<sup>2</sup> is derived for the considered device. Laser operation is not achieved
when field-induced exciton dissociation is considered. For induced absorptions, maximum relative cross sections
of 9.6 × 10<sup>-8</sup> for polarons and 1.4 × 10<sup>-4</sup> for triplet excitons have been calculated, which would still allow laser
operation. For higher relative absorption cross sections, laser operation is suppressed for all current densities.
Furthermore, the impact of field quenching is analyzed and the separation of singlet excitons from polarons and
triplet excitons in the time domain is studied.