Mr. Nicolas Jourdan Profile

Nicolas Jourdan

at imec

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Author

Publications (3)

Proceedings Article | 13 June 2022 Presentation

MOL patterning challenges in scaled SRAM with vertical Surrounding Gate Transistors (SGT)

Anish Dangol, Dmitry Batuk, Gerardo Tadeo Martinez Alanis, Jef Geypen, Kenichi Kanazawa, Testuo Izawa, Masakazu Kakumu, Koji Sakui, Nozomu Harada, Clement Porret, Zheng Tao, Yisuo Li, Waikin Li, Minsoo Kim, Basoene Briggs, Katia Devriendt, Lieve Teugels, Farid Sebai, Christophe Lorant, Erik Rosseel, Alfonso Sepúlveda Márquez, Nicolas Jourdan, Juergen Boemmels, Jerome Mitard, Philippe Matagne, Efrain Altamirano-Sánchez, Lars-ake Ragnarsson

Proceedings Volume PC12056, PC120560B (2022) https://doi.org/10.1117/12.2614772

KEYWORDS: Optical lithography, Metals, Etching, Transistors, Atomic layer deposition, Silica, Inspection, Electrodes, Transmission electron microscopy, System on a chip

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Proceedings Article | 25 May 2022 Presentation + Paper

Buried power rail integration for CMOS scaling beyond the 3 nm node

A. Gupta, Z. Tao, D. Radisic, H. Mertens, O. Varela Pedreira, S. Demuynck, J. Bömmels, K. Devriendt, N. Heylen, S. Wang, K. Kenis, L. Teugels, F. Sebaai, C. Lorant, N. Jourdan, B. Chan, S. Subramanian, F. Schleicher, A. Peter, N. Rassoul, Y. Siew, B. Briggs, D. Zhou, E. Rosseel, E. Capogreco, G. Mannaert, A. Sepúlveda, E. Dupuy, K. Vandersmissen, B. Chehab, G. Murdoch, E. Altamirano Sanchez, S. Biesemans, Zs. Tőkei, E. Dentoni Litta, N. Horiguchi

Proceedings Volume 12056, 120560B (2022) https://doi.org/10.1117/12.2615641

KEYWORDS: Ruthenium, Metals, Molybdenum, Etching, Tungsten, Front end of line, Chemical mechanical planarization, Silicon

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Proceedings Article | 23 March 2018 Presentation + Paper

Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers

Christopher Wilson, Basoene Briggs, Joost Bekaert, Victor Blanco, Bogumila Kutrzeba Kotowska, Janko Versluijs, Stefan Decoster, Ming Mao, Marleen van der Veen, Nicolas Jourdan, Zaid El-Mekki, Nancy Heylen, Patrick Verdonck, Danny Wan, Arindam Mallik, Ryoung-han Kim, Greg McIntyre, Kurt Ronse, Jürgen Bömmels, Zsolt Tőkei, Dan Mocuta, Dieter Van den Heuvel, Peter De Bisschop, Eric Hendrickx, Stéphane Larivière, Els Kesters, Christophe Béral, Ivan Ciofi

Proceedings Volume 10583, 105830U (2018) https://doi.org/10.1117/12.2299389

KEYWORDS: Extreme ultraviolet, Optical lithography, Etching, Tin, Resistance, Metals, Semiconducting wafers, Critical dimension metrology, Photomasks, Copper

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